IXGT50N90B2 IXYS, IXGT50N90B2 Datasheet
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Manufacturer Part Number
IXGT50N90B2
Description
IGBT 900V 75A TO-268
Specifications of IXGT50N90B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Power - Max
400W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
900
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
200
Eoff, Typ, Tj=125°c, Igbt, (mj)
8.7
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
B2-Class High Speed IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
CM
C25
C110
GES
CES
J
JM
stg
CGR
GEM
C
GE(th)
CE(sat)
CES
GES
© 2004 IXYS All rights reserved
d
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @
T
Mounting torque (TO-247)
Test Conditions
I
V
V
V
I
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= I
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
C110
, V
CES
GE
TM
VJ
GE
= 15 V
CE
= 125°C, R
= ±20 V
= V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
≤
Advance Technical Information
T
T
T
J
J
J
600V
(T
= 25°C
= 150°C
= 125°C
J
= 25°C, unless otherwise specified)
TO-247 AD
TO-268
IXGH 50N90B2
IXGT 50N90B2
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
I
typ.
CM
2.2
1.13/10Nm/lb.in.
= 100
900
900
200
±20
±30
400
150
300
75
50
max.
±100
6
4
5.0
2.7
50
1
mA
nA
µA
°C
°C
°C
°C
W
A
V
V
V
V
V
V
V
A
A
A
g
g
G = Gate,
E = Emitter,
Features
Applications
Advantages
TO-247
TO-268
(IXGH)
(IXGT)
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)
G
C
G
E
C = Collector,
TAB = Collector
= 900 V
=
=
= 200 ns
E
2.7 V
DS99377(04/05)
75 A
C (TAB)
C (TAB)
Related parts for IXGT50N90B2
IXGT50N90B2 Summary of contents
... GE GE(th CES CES ± GES CE(sat) C110 © 2004 IXYS All rights reserved Advance Technical Information IXGH 50N90B2 IXGT 50N90B2 Maximum Ratings 900 = 1 MΩ 900 GE ±20 ± 200 = 10 Ω 100 G CM ≤ 600V 400 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. TO-247 AD ...
... R thJC (TO-247) R thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
... CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 6.5 6.0 5 100A C 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1 Volts G E © 2004 IXYS All rights reserved º C 300 250 9V 200 150 7V 100 5V 2.5 3 3.5 4 4.5 C 1.3 1.2 9V 1.1 1.0 7V 0.9 0 ...
... 720V 800 CE 700 600 500 400 300 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 125 150 175 200 225 C º 125 C J º ...
... CE 350 300 250 200 150 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts 0.1 0.01 0.1 © 2004 IXYS All rights reserved 15 13.5 12 10.5 9 7 100A 3 C 50A 1.5 25A 105 115 125 110 100 ies oes res ...
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