IXGT60N60C3D1 IXYS, IXGT60N60C3D1 Datasheet - Page 5

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IXGT60N60C3D1

Manufacturer Part Number
IXGT60N60C3D1
Description
IGBT 75A 600V TO-268
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGT60N60C3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
380W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
60
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tj=110°c, Diode, (a)
26
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2010 IXYS CORPORATION, All Rights Reserved
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
180
160
140
120
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
25
20
3
E
T
V
25
4
E
R
V
J
35
off
CE
Fig. 16. Inductive Turn-off Switching Times
off
G
CE
= 125ºC , V
Fig. 12. Inductive Switching Energy Loss
Fig. 14. Inductive Switching Energy Loss
= 3Ω
= 480V
= 480V
30
5
45
,
V
I
I
35
6
GE
C
C
E
E
GE
on
= 80A
= 40A
vs. Junction Temperature
on
= 15V
55
T
= 15V
- - - -
- - - -
J
vs. Collector Current
40
vs. Gate Resistance
7
- Degrees Centigrade
R
65
I
45
8
G
T
C
J
- Ohms
- Amperes
= 125ºC
50
9
75
10
55
I
I
t
R
V
C
C
f
G
CE
85
= 40A
= 80A
= 3Ω , V
= 480V
60
11
95
GE
12
t
65
d(off)
T
= 15V
J
105
= 25ºC
- - - -
70
13
115
14
75
80
15
125
140
130
120
110
100
90
80
70
60
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
160
140
120
100
170
160
150
140
130
120
110
100
80
60
40
20
90
80
70
60
20
25
3
E
V
R
off
CE
25
G
I
t
R
V
C
f
CE
G
35
= 3
= 480V
4
Fig. 17. Inductive Turn-off Switching Times
Fig. 15. Inductive Turn-off Switching Times
t
T
V
= 80A
= 3Ω , V
f
Fig. 13. Inductive Switching Energy Loss
J
CE
= 480V
Ω ,
= 125ºC,
30
= 480V
5
45
V
E
GE
35
GE
on
t
d(off)
6
= 15V
vs. Junction Temperature
V
= 15V
t
- - - -
d(off)
55
T
GE
J
40
vs. Collector Current
- - - -
vs. Gate Resistance
= 15V
- Degrees Centigrade
I
7
- - - -
C
I
C
= 40A
65
45
- Amperes
8
T
R
J
G
= 125ºC
50
- Ohms
75
9
55
I
10
C
85
IXGH60N60C3D1
IXGT60N60C3D1
= 80A
60
11
95
65
12
105
I
C
T
13
70
J
= 40A
= 25ºC
115
14
75
125
15
80
280
260
240
220
200
180
160
140
120
100
80
60
130
120
110
100
90
80
70
60
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

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