IXGT60N60C3D1 IXYS, IXGT60N60C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGT60N60C3D1
• Description: IGBT 75A 600V TO-268
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGT60N60C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 50
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.8
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 26
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
1.00
0.10
0.01
70
60
50
40
30
20
10
10
0
0.0001
0
0
f
= 1 MHz
20
5
40
10
Fig. 7. Transconductance
Fig. 9. Capacitance
60
15
V
I
0.001
C
CE
- Amperes
- Volts
80
20
100
T
25
J
C ies
= - 40ºC
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
120
30
25ºC
125ºC
140
35
0.01
Pulse Width - Seconds
160
40
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
100
0
V
I
I
10
150
C
G
T
R
dv / dt < 10V / ns
CE
J
0.1
G
= 40A
= 10 mA
= 300V
= 125ºC
= 3Ω
Fig. 10. Reverse-Bias Safe Operating Area
20
200
30
250
40
Fig. 8. Gate Charge
Q
300
G
V
50
- NanoCoulombs
CE
- Volts
350
60
IXGH60N60C3D1
IXGT60N60C3D1
400
1
70
450
80
90
500
100
550
110
600
120
10