IXGT40N60B2D1 IXYS, IXGT40N60B2D1 Datasheet - Page 4
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IXGT40N60B2D1
Manufacturer Part Number
IXGT40N60B2D1
Description
IGBT 600V 75A DUAL TO-268
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH40N60B2D1.pdf
(6 pages)
Specifications of IXGT40N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 30A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.1
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
30
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
600
550
500
450
400
350
300
250
200
150
100
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
60
50
40
30
20
10
0
0
15
0
3
T
J
R
V
V
= -40ºC
Fig. 11. Dependence of Turn-Off
t
t
T
V
V
20
125ºC
d(off)
fi
Fig. 9. Dependence of Turn-Off
GE
CE
G
J
6
GE
CE
Fig. 7. Transconductance
25ºC
= 125ºC
30
= 3.3Ω
-
= 400V
= 15V
= 400V
= 15V
- - - - -
25
Sw itching Tim e on R
9
I
C
= 60A
60
30
12
Energy on I
I
I
R
C
C
- Amperes
- Amperes
G
35
15
- Ohms
90
I
C
40
18
T
T
= 30A
J
J
= 125ºC
= 25ºC
c
120
45
21
G
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
50
24
I
150
C
= 15A
55
27
180
60
30
300
275
250
225
200
175
150
125
100
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
75
3
0
25
15
3
R
V
V
Fig. 12. Dependence of Turn-Off
Fig. 10. Dependence of Turn-Off
35
T
T
T
V
V
20
Fig. 8. Dependence of Turn-Off
GE
CE
G
6
J
J
J
GE
CE
= 125ºC
= 25ºC
= 125ºC
= 3.3Ω
= 400V
= 15V
= 400V
= 15V
Energy on Tem perature
45
Sw itching Tim e on I
25
9
T
J
55
- Degrees Centigrade
12
30
Energy on R
I
R
C
65
- Amperes
G
15
35
IXGH 40N60B2D1
IXGT 40N60B2D1
- Ohms
75
40
18
85
G
I
I
I
45
C
21
C
C
I
C
I
I
= 60A
95
= 30A
= 15A
C
C
= 60A
c
t
t
R
V
V
= 30A
= 15A
d(off)
fi
GE
CE
G
50
24
105 115 125
- - - - - -
= 3.3Ω
= 400V
= 15V
6,534,343
55
27
60
30