IXGT40N60B2D1 IXYS, IXGT40N60B2D1 Datasheet - Page 2

• Manufacturer Part Number: IXGT40N60B2D1
• Description: IGBT 600V 75A DUAL TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT40N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.1
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Reverse Diode (FRED)
Symbol
V
I
t
R
Min. Recommended Footprint
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
RM
rr
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
F
thJC
fs
off
on
off
thJC
thCK
ies
oes
res
g
ge
gc
I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
= 30 A; V
Test Conditions
I
t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
I
Test Conditions
V
I
Inductive load, T
I
V
(TO-247)
Inductive load, T
I
V
F
F
F
C
C
C
R
CE
CE
CE
= 30 A, V
= 30 A, V
= 30 A, V
= 30 A, V
= 30 A, V
= 100 V
= 1 A; -di/dt = 100 A/µs; V
= 25 V, V
= 400 V, R
= 400 V, R
CE
= 10 V,
GE
GE
GE
GE
GE
GE
= 15 V, V
= 15 V
= 15 V
= 0 V, -di
= 0 V, Pulse test
G
G
= 0 V, f = 1 MHz
= 3.3 Ω
= 3.3 Ω
J
J
= 25° ° ° ° ° C
= 125° ° ° ° ° C
CE
F
/dt =100 A/µs, T
= 300 V
R
(T
= 30 V
(T
J
J
= 25°C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
= 25°C, unless otherwise specified)
T
J
T
J
= 100°C 100
J
= 100°C
=150°C
min.
min.
20
Characteristic Values
Characteristic Values
2560
typ.
1.10
0.25
typ.
210
100
130
240
150
0.4
0.3
25
36
54
15
36
18
20
82
18
20
max.
max.
0.42 K/W
200
150
1.6
2.5
0.9 K/W
0.8 mJ
4
K/W
mJ
mJ
nC
nC
nC
n s
n s
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
V
V
A
S
TO-268 Outline
TO-247 AD Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXGH 40N60B2D1
IXGT 40N60B2D1
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Millimeter
4.7
2.2
2.2
1.0
.4
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
∅ P
0.205 0.225
0.232 0.252
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
Inches
6,534,343
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216