IXGH20N100 IXYS, IXGH20N100 Datasheet
IXGH20N100
Manufacturer Part Number
IXGH20N100
Description
IGBT 1000V 40A TO-247
Manufacturer
IXYS
Datasheet
1.IXGH20N100.pdf
(2 pages)
Specifications of IXGH20N100
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
280
Eoff, Typ, Tj=125°c, Igbt, (mj)
3.5
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH20N100
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
IGBT
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 1 mA, V
= 250 mA, V
= V
= 0 V
= 0 V, V
= I
C90
CES
, V
GE
GE
VJ
GE
= 125°C, R
= 15 V
= ±20 V
CE
= 0 V
= V
GE
GE
= 1 MW
G
= 47 W
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXGH 20N100
IXGT 20N100
TO-247 AD
TO-268
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.2
I
1.13/10 Nm/lb.in.
CM
1000
1000
= 40
±20
±30
300
260
150
150
40
20
80
CES
max.
±100
6
4
250
3.0
5
1
mA
mA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-268
(IXGT)
G = Gate,
E = Emitter,
Features
• International standard packages
• High current handling capability
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• Capacitor discharge
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
TO-247 AD (IXGH)
C25
fi(typ)
JEDEC TO-268 surface and
JEDEC TO-247 AD
- drive simplicity
power supplies
(isolated mounting screw hole)
CES
CE(sat)
G
C
=
= 1000 V
=
=
E
G
C = Collector,
TAB = Collector
E
280 ns
3.0 V
40 A
C (TAB)
98620B (7/00)
(TAB)
1 - 2
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IXGH20N100 Summary of contents
Page 1
... CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 20N100 IXGT 20N100 Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 260 1 ...
Page 2
... CES 3 0. off 700 520 , CES 6.5 G 0.25 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 20N100 IXGT 20N100 TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. ...