IXGR40N60B2 IXYS, IXGR40N60B2 Datasheet - Page 6

• Manufacturer Part Number: IXGR40N60B2
• Description: IGBT 600V 60A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGR40N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS 247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 33
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.9
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.1
• Rthjc, Max, Igbt, (°c/w): 0.74
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.0001
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 20 Dynamic parameters Q
Fig. 17 Forward current I
Fig. 23 Transient thermal resistance junction to case
I
0.001
F
Z
K
0.01
K/W
thJC
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
A
60
50
40
30
20
10
10
0
1
0
0
T
T
versus T
VJ
VJ
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
T
VJ
F
T
V
120
VJ
versus V
F
=25°C
3
°C
r
, I
0.001
V
RM
160
F
t
Q
rr
1000
Fig. 21 Recovery time t
Fig. 18 Reverse recovery charge Q
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
versus -di
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
I
I
I
0.1
F
F
F
F
/dt
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
rr
VJ
t
F
R
/dt
versus -di
= 100°C
= 300V
A/µs
s
800
DSEP 2x31-06B
A/µs
1000
1000
1
F
/dt
r
I
V
RM
FR
Constants for Z
Fig. 22 Peak forward voltage V
t
Fig. 19 Peak reverse current I
30
25
20
15
10
20
15
10
fr
A
V
5
0
5
0
1
2
3
4
i
0
0
T
I
t
T
V
F
fr
VJ
VJ
R
= 100°C
= 30A
= 100°C
= 300V
200
200
versus di
IXGR 40N60B2
IXGR 40N60B2D1
versus -di
R
0.436
0.482
0.117
0.115
I
I
I
F
F
F
= 60A
= 30A
= 15A
thi
400
400
thJC
(K/W)
V
F
FR
calculation:
/dt
F
600
600
/dt
di
-di
F
/dt
F
/dt
A/µs
A/µs
800
800
t
0.0055
0.0092
0.0007
0.0418
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
µs
and
t
fr