IXGR40N60B2 IXYS, IXGR40N60B2 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGR40N60B2
Manufacturer Part Number
IXGR40N60B2
Description
IGBT 600V 60A ISOPLUS247
Specifications of IXGR40N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
167W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
33
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.9
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.1
Rthjc, Max, Igbt, (°c/w)
0.74
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
ISOPLUS247
Optimized for 10-25 KHz hard switching
and up to 150 KHz resonant switching
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
Weight
Symbol
V
I
I
V
C2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
CM
C25
C110
F110
GES
CES
CES
GES
GEM
C
J
JM
stg
ISOL
GE(th)
CE(sat)
CGR
© 2004 IXYS All rights reserved
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
50/60 Hz RMS, t = 1m
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Test Conditions
V
V
V
I
C
C
C
C
C
C
J
J
CE
GE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 30 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
TM
IGBT
GE
(IXGR40N60B2D1)
GE
= 1 MΩ
G
= 10 Ω
T
T
T
(T
J
J
J
= 25°C
= 150°C
= 25°C
J
= 25°C, unless otherwise specified)
IXGR 40N60B2
IXGR 40N60B2D1
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
I
CM
2500
200
600
600
±20
±30
= 80
167
300
150
60
33
25
max.
±100
5.0
6
1.9
50
1
D1
V
mA
nA
°C
µA
°C
°C
°C
W
V
V
V
V
A
V
A
A
A
A
g
V
ISOPLUS247 (IXGR)
G = Gate,
E = Emitter
Features
Applications
Advantages
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi typ
CE(sat)
CES
E153432
G
C
E
C = Collector,
= 600 V
=
=
=
DS99162A(05/04)
1.9 V
(ISOLATED TAB)
75 A
82 ns
TM
process
Related parts for IXGR40N60B2
IXGR40N60B2 Summary of contents
... Test Conditions 25°C to 150°C CES 25°C to 150°C; R CGR J V Continuous GES V Transient GEM 25°C C25 110°C C110 110°C (IXGR40N60B2D1) F110 25° SSOA 125° Clamped inductive load @ ≤ 600 V (RBSOA 25° stg V 50/60 Hz RMS ISOL Maximum lead temperature for soldering 1 ...
... V, - 100 -di/dt = 100 A/µ thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 20 ...
... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4 3 60A 3 C 30A 15A 2 Volts G E © 2004 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 210 9V 180 150 7V 120 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1.0 0.9 0.8 5V 0.7 ...
... 400V CE 400 350 300 250 60A 200 C 150 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 120 150 180 c 2.7 2.4 2.1 1.8 1 125ºC J 1.2 0.9 0 25º ...
... Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 0.8 0.7 0.6 0.5 0.4 0.3 0 © 2004 IXYS All rights reserved 15A 105 115 125 C ies C oes C res 13. M aximu m Tran sien t Th ermal R esistan ce 10 Puls e W idth - millis ec onds ...
... T VJ Fig. 20 Dynamic parameters versus K thJC 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 23 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 1000 T = 100° 300V R 800 I = 60A 30A 15A F 600 400 200 ...
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