STGWA35HF60WDI STMicroelectronics, STGWA35HF60WDI Datasheet - Page 3

• Manufacturer Part Number: STGWA35HF60WDI
• Description: IGBT 600V 35A TO-247 LONG LEADS
• Manufacturer: STMicroelectronics

Specifications of STGWA35HF60WDI

• Package / Case: TO-247-3 (Straight Leads)
• Mounting Type: Through Hole
• Power - Max: 260W
• Input Type: Standard
• Current - Collector (ic) (max): 70A
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

STGW35HF60WDI
2
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
J
(BR)CES
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
= 25 °C unless otherwise specified)
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
GE
GE
Dynamic
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 16090 Rev 2
I
V
V
V
V
V
V
C
V
V
V
V
(see
GE
GE
GE
CE
CE
CE
CE
= 1 mA
CE
GE
CE
GE
= V
= 600 V
= 600 V,
= 15V, I
= 15 V
= 15 V, I
= ±20 V
= 0
= 25 V, f = 1 MHz,
= 390 V, I
= 15 V,
Figure
GE
Test conditions
Test conditions
, I
,
C
I
C
C
C
T
3)
= 20 A,
= 20 A
= 1 mA
= 20 A
J
C
= 125 °C
= 20 A,
T
J
= 125 °C
Electrical characteristics
Min. Typ. Max. Unit
Min. Typ. Max. Unit
3.75
600
-
-
2400
1.65
235
140
1.9
15
50
13
52
± 100
5.75
250
2.5
1
-
-
mA
nC
nC
nC
µA
nA
pF
pF
pF
3/10
V
V
V
V
S