IXGQ28N120BD1 IXYS, IXGQ28N120BD1 Datasheet - Page 6

• Manufacturer Part Number: IXGQ28N120BD1
• Description: IGBT 1200V 50A FRD TO-3P
• Manufacturer: IXYS

Specifications of IXGQ28N120BD1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 28A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Fig. 17 Forward current I
Fig. 20 Dynamic parameters Q
Fig. 23 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
Z
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
30
25
20
15
10
10
A
5
0
1
0
0
T
T
versus T
VJ
VJ
=150°C
=100°C
1
40
I
RM
Q
r
VJ
0.0001
2
80
T
3
F
VJ
T
V
120
VJ
versus V
F
= 25°C
°C
r
4
, I
0.001
V
RM
160
F
4,850,072
4,835,592
Q
t
rr
r
2000
1500
1000
Fig. 18 Reverse recovery charge Q
Fig. 21 Recovery time t
150
140
130
120
110
100
500
nC
ns
90
4,931,844
4,881,106
0
100
0.01
0
T
V
VJ
R
= 100°C
= 600V
versus -di
200
I
I
I
5,034,796
F
F
F
5,017,508
= 20A
= 10A
= 5A
400
F
I
I
I
0.1
/dt
F
F
F
= 20A
= 10A
= 5A
-di
5,049,961
5,063,307
600
F
-di
T
V
/dt
VJ
R
rr
F
t
= 100°C
= 600V
/dt
versus -di
A/µs
s
800
A/µs
DSEP 8-12A
5,237,481
5,187,117
1000
1000
1
F
/dt
r
5,381,025
5,486,715
I
V
RM
FR
Fig. 19 Peak reverse current I
120
Constants for Z
Fig. 22 Peak forward voltage V
t
40
30
20
10
80
40
fr
A
V
0
0
1
2
3
i
0
0
6,306,728B1
6,404,065B1
T
V
t
VJ
I
I
I
R
fr
F
F
F
= 20A
= 10A
= 5A
= 100°C
= 600V
200
200
versus -di
versus di
R
1.449
0.558
0.493
thi
6,162,665
6,259,123B1 6,306,728B1 6,683,344
IXGQ28N120BD1
400
400
thJC
(K/W)
IXGQ 28N120B
F
calculation:
/dt
F
/dt
600
600
di
-di
T
I
6,534,343
F
F
V
/dt
F
VJ
FR
/dt
= 100°C
A/µs
= 10A
A/µs
800
800
t
0.0052
0.0003
0.017
i
(s)
RM
1000
1000
6,583,505
FR
1.2
µs
0.8
0.4
0.0
and
t
fr