IXGQ28N120BD1 IXYS, IXGQ28N120BD1 Datasheet

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IXGQ28N120BD1

Manufacturer Part Number
IXGQ28N120BD1
Description
IGBT 1200V 50A FRD TO-3P
Manufacturer
IXYS
Datasheet

Specifications of IXGQ28N120BD1

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 28A
Current - Collector (ic) (max)
50A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
High Voltage IGBT with Diode
Symbol
V
I
I
V
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
GES
CES
CM
C25
C110
GE(th)
CE(sat)
JM
GEM
J
stg
CES
CGR
GES
C
d
Test Conditions
I
V
V
V
I
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque
C
C
CE
GE
CE
C
C
C
C
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= V
= 0 V
= 0 V, V
= 28A, V
CES
GE
J
GE
= 125°C, R
= ±20 V
= 15 V
CE
T
J
= V
= 25°C
GE
GE
G
= 1 MΩ
= 10 Ω
T=125°C
(T
J
= 25°C, unless otherwise specified)
28N120BD1
IXGQ 28N120B
IXGQ 28N120BD1
28N120B
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@0.8 V
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
2.9
2.8
I
CM
1200
1200
= 60
±20
±30
150
250
150
300
50
28
CES
max.
6
±100
5.0
3.5
D1
25
50
µA
µA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
V
I
V
t
TO-3P (IXGQ)
G = Gate
E = Emitter
Features
Advantages
C25
fi(typ)
International standard package
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
CES
CE(sat)
G
C
E
= 1200 V
=
= 160 ns
= 3.5 V
C = Collector
TAB = Collector
50 A
DS99135(12/03)
RM
(TAB)

Related parts for IXGQ28N120BD1

IXGQ28N120BD1 Summary of contents

Page 1

... 25°C CES CE CES ± GES 28A CE(sat Note 2 © 2003 IXYS All rights reserved IXGQ 28N120B IXGQ 28N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 150 = 10 Ω @0.8 V CES 250 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 2

... Switching times may increase for V higher T or increased Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 3

... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 56A C 28A 14A Volts G E © 2003 IXYS All rights reserved 270 240 210 180 9V 150 120 2.5 3 3.5 4 1.3 1.2 1.1 9V 1.0 7V 0.9 0.8 0.7 5V 0.6 2.5 3 3.5 4 100 T = 25º ...

Page 4

... T = 125º 15V GE 1000 V = 960V CE 800 600 I = 14A C 400 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 100 25º 700 600 500 ...

Page 5

... C E 1.00 0.50 0.10 1 © 2003 IXYS All rights reserved I = 14A 56A 14A 105 115 125 C ies C oes C res Fig. 16. Maxim um Trans ient Therm al Res istance 10 Pulse Width - milliseconds IXGQ 28N120B IXGQ28N120BD1 Fig. 14. Gate Charge 600V 28A 0mA nanoCoulombs G 100 100 ...

Page 6

... 110 100 90 0 200 400 600 800 A/µs -di /dt F Fig. 21 Recovery time t versus - 0.01 0.1 t 4,850,072 4,931,844 5,034,796 5,063,307 4,835,592 4,881,106 5,017,508 5,049,961 IXGQ 28N120B IXGQ28N120BD1 100° 600V 20A 10A 1000 0 200 400 600 Fig. 19 Peak reverse current I r versus -di ...

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