IXGH32N90B2D1 IXYS, IXGH32N90B2D1 Datasheet - Page 7

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IXGH32N90B2D1

Manufacturer Part Number
IXGH32N90B2D1
Description
IGBT 900V 64A FRD TO-247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGH32N90B2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 32A
Current - Collector (ic) (max)
64A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
900
Ic25, Tc=25°c, Igbt, (a)
64
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.25
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
27
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH32N90B2D1
Manufacturer:
IXYS
Quantity:
18 000
Z
I
0.001
Fig. 24. Forward current I
Fig. 27. Dynamic parameters Q
Fig. 30. Transient thermal resistance junction to case
F
K
thJC
0.01
© 2005 IXYS All rights reserved
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
70
60
50
40
30
20
10
A
2
0
1
0
0
T
T
versus T
VJ
VJ
=150°C
=100°C
40
1
I
RM
Q
r
0.0001
VJ
80
2
T
F
VJ
T
V
versus V
120
VJ
F
3
= 25°C
C
r
V
, I
0.001
RM
160
4
F
t
Q
rr
Ultrafast Diode Charateristic Curves
Fig. 25. Reverse recovery charge Q
Fig. 28. Recovery time t
220
200
180
160
140
120
r
μC
ns
5
4
3
2
1
0
100
0.01
0
T
V
VJ
R
versus -di
= 100°C
= 600V
200
I
I
I
F
F
F
= 60A
= 30A
= 15A
400
F
/dt
0.1
-di
600
I
I
I
F
F
F
= 60A
= 30A
=15A
F
-di
/dt
T
V
rr
VJ
R
t
F
versus -di
/dt
= 100°C
= 600V
A/μs
800
s
A/μs
1000
1000
1
F
/dt
r
I
V
RM
120
FR
Fig. 26. Peak reverse current I
Constants for Z
Fig. 29. Peak forward voltage V
60
50
40
30
20
10
80
40
A
V
0
0
1
2
3
i
0
0
T
V
t
VJ
R
fr
I
I
I
versus -di
= 100°C
= 600V
F
F
F
200
200
= 60A
= 30A
=15A
t
fr
IXGH 32N90B2D1
IXGT 32N90B2D1
versus di
R
0.465
0.179
0.256
thi
400
400
(K/W)
thJC
F
/dt
calculation:
600
600
F
/dt
di
-di
T
I
F
F
V
/dt
F
VJ
/dt
FR
= 100°C
A/μs
A/μs
800
= 30A
800 1000
t
0.0052
0.0003
0.0397
i
(s)
RM
1000
FR
and
μs
1.2
0.8
0.4
0.0
t
fr

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