IXGH32N90B2D1 IXYS, IXGH32N90B2D1 Datasheet - Page 4

• Manufacturer Part Number: IXGH32N90B2D1
• Description: IGBT 900V 64A FRD TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH32N90B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 32A
• Current - Collector (ic) (max): 64A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 900
• Ic25, Tc=25°c, Igbt, (a): 64
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.25
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 27
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
0.01
100
0.1
35
30
25
20
15
10
10
5
0
1
0.1
0
0
f = 1 MHz
Fig. 7. Transconductance
5
20
Fig. 9. Capacitance
10
T
J
=
1 25
-40
25
I
15
V
C
º
40
º
º
C
C E
C
C
- Amperes
- Volts
20
60
Fig. 11. Maxim um Transient Therm al Resistance
1
C
C
C
25
oes
ies
res
30
80
35
Pulse Width - milliseconds
100
40
10
16
14
12
10
70
60
50
40
30
20
10
8
6
4
2
0
0
100
0
V
I
I
C
G
CE
10
200
= 32A
= 1 0mA
T
R
dV/dT < 10V/ns
Fig. 10. Reverse-Bias Safe
J
G
= 450V
= 125
20
= 10Ω
Fig. 8. Gate Charge
300
Operating Area
Q
º
30
C
G
400
- nanoCoulombs
V
40
100
C E
IXGH 32N90B2D1
IXGT 32N90B2D1
500
- Volts
50
60
600
70
700
80
800
90
1000
100
900