IRGIB15B60KD1P International Rectifier, IRGIB15B60KD1P Datasheet - Page 3
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IRGIB15B60KD1P
Manufacturer Part Number
IRGIB15B60KD1P
Description
IGBT ULT FAST DIO 600V TO-220FP
Manufacturer
International Rectifier
Datasheet
1.IRGIB15B60KD1P.pdf
(13 pages)
Specifications of IRGIB15B60KD1P
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
19A
Power - Max
52W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
19A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Pd
52W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
No. Of Pins
3
Rise Time
35ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGIB15B60KD1P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
www.irf.com
100
0.1
10
Fig. 1 - Maximum DC Collector Current vs.
1
20
16
12
8
4
0
1
0
T
20
Fig. 3 - Forward SOA
C
= 25°C; T
10
40
Case Temperature
60
V CE (V)
100
80 100 120 140 160 180
T C (°C)
J
≤
150°C
1000
100 µs
10 µs
1ms
DC
10000
100
10
Fig. 2 - Power Dissipation vs. Case
1
55
50
45
40
35
30
25
20
15
10
5
0
10
0
IRGIB15B60KD1P
Fig. 4 - Reverse Bias SOA
20
T
J
Temperature
40
= 150°C; V
60
V CE (V)
80 100 120 140 160 180
T C (°C)
100
GE
=15V
1000
3