IRGIB15B60KD1P International Rectifier, IRGIB15B60KD1P Datasheet - Page 3

• Manufacturer Part Number: IRGIB15B60KD1P
• Description: IGBT ULT FAST DIO 600V TO-220FP
• Manufacturer: International Rectifier

Specifications of IRGIB15B60KD1P

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 19A
• Power - Max: 52W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 19A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Pd: 52W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• No. Of Pins: 3
• Rise Time: 35ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
Fig. 1 - Maximum DC Collector Current vs.
1
20
16
12
8
4
0
1
0
T
20
Fig. 3 - Forward SOA
C
= 25°C; T
10
40
Case Temperature
60
V CE (V)
100
80 100 120 140 160 180
T C (°C)
J
≤
150°C
1000
100 µs
10 µs
1ms
DC
10000
100
10
Fig. 2 - Power Dissipation vs. Case
1
55
50
45
40
35
30
25
20
15
10
5
0
10
0
IRGIB15B60KD1P
Fig. 4 - Reverse Bias SOA
20
T
J
Temperature
40
= 150°C; V
60
V CE (V)
80 100 120 140 160 180
T C (°C)
100
GE
=15V
1000
3