IRGIB15B60KD1P International Rectifier, IRGIB15B60KD1P Datasheet
IRGIB15B60KD1P
Specifications of IRGIB15B60KD1P
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IRGIB15B60KD1P Summary of contents
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... R Junction-to-Case- Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRGIB15B60KD1P G n-channel Parameter 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– ––– PD- 94914 ...
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... IRGIB15B60KD1P Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 100 V CE (V) Fig Forward SOA T = 25°C; T 150°C ≤ www.irf.com IRGIB15B60KD1P Fig Power Dissipation vs. Case 100 10 µs 100 µs 10 1ms DC 1 1000 10000 100 120 140 160 180 T C (° ...
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... IRGIB15B60KD1P 18V 14 VGE = 15V 12 VGE = 12V VGE = 10V 10 VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = -40° 60µ 18V 14 VGE = 15V 12 VGE = 12V VGE = 10V 10 VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 150° 60µ Fig Typ. IGBT Output Characteristics 70 60 ...
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... 7. 15A 30A (V) Fig Typical -40° 7. 15A 30A (V) Fig Typical V vs 150°C J www.irf.com IRGIB15B60KD1P Fig Typical V vs 150° Fig Typ. Transfer Characteristics 7. 15A 30A (V) vs 25° 25° 150° 25° ( 50V 10µ ...
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... IRGIB15B60KD1P 1400 1200 1000 800 600 400 200 (A) Fig Typ. Energy Loss vs 150°C; L=1.07mH 22Ω 15V G GE 1200 E OFF 1000 800 600 400 200 100 R G (Ω) Fig Typ. Energy Loss vs 150°C; L=1.07mH 15A 15V 1000 100 E OFF E ON ...
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... 200 Ω (A) Fig Typical Diode 150° 200 400 600 di F /dt (A/µs) Fig. 19- Typical Diode 400V 15V 15A 150° www.irf.com IRGIB15B60KD1P Fig Typical Diode I vs 1500 1000 500 0 0 800 1000 Fig Typical Diode Q vs 400V 120 160 R G (Ω) vs ...
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... IRGIB15B60KD1P 200 160 120 10000 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz GE 8 200 Ω 100 Ω 47 Ω 22 Ω (A) Fig Typical Diode E vs 150° Cies Coes 4 2 Cres 100 Fig Typical Gate Charge vs 300V 400V Total Gate Charge (nC 15A 2500µH CE www ...
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... Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 1 0.10 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGIB15B60KD1P τ J τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci τ ...
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... IRGIB15B60KD1P DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DUT Fig.C.T.3 - S.C.SOA Circuit 10 L VCC diode clamp / 360V DUT Rg Fig.C.T.5 - Resistive Load Circuit L DUT 480V Rg Fig.C.T.2 - RBSOA Circuit DUT DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit VCC www.irf.com VCC ...
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... Peak -500 I RR 10% -600 Peak -700 -800 -900 0.10 0.20 0.30 0.40 time (µS) Fig. WF3- Typ. Diode Recovery Waveform @ T = 150°C using Fig. CT.4 J www.irf.com IRGIB15B60KD1P 30 800 700 25 600 20 500 15 400 300 10 200 5 CE 100 -100 0.7 0.2 Fig ...
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... IRGIB15B60KD1P TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information "K " Note: "P" in assembly line position indicates "Lead-Free" TO-220 FullPak packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...