IXGH36N60B3D1 IXYS, IXGH36N60B3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH36N60B3D1
• Description: IGBT 200A 600V TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH36N60B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 36A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 200
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 36
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (°c/w): 0.5
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
5
6
Fig. 5. Collector-to-Emitter Voltage
0.4
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
I
C
= 60A
15A
30A
8
0.8
0.8
V
V
V
9
CE
CE
GE
@ 125ºC
@ 25ºC
- Volts
- Volts
- Volts
1.2
1.2
V
10
GE
V
GE
= 15V
13V
11V
9V
11
= 15V
13V
11V
9V
1.6
1.6
12
5V
7V
T
J
7V
5V
13
= 25ºC
2.0
2.0
14
2.4
2.4
15
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
300
270
240
210
180
150
120
240
220
200
180
160
140
120
100
90
60
30
80
60
40
20
0
0
3.5
-50
0
V
V
4.0
Fig. 2. Extended Output Characteristics
GE
GE
-25
= 15V
2
= 15V
13V
11V
4.5
Fig. 4. Dependence of V
Fig. 6. Input Admittance
0
5.0
Junction Temperature
4
T
J
9V
5V
IXGH36N60B3D1
5.5
7V
- Degrees Centigrade
25
V
CE
V
6
@ 25ºC
GE
6.0
- Volts
- Volts
50
6.5
8
75
7.0
T
I
I
I
CE(sat)
J
C
C
C
10
= - 40ºC
7.5
= 60A
= 30A
= 15A
100
125ºC
25ºC
on
8.0
12
125
8.5
150
9.0
14