IXGH36N60B3D1 IXYS, IXGH36N60B3D1 Datasheet

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IXGH36N60B3D1

Manufacturer Part Number
IXGH36N60B3D1
Description
IGBT 200A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH36N60B3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 30A
Current - Collector (ic) (max)
36A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
200
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
30
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH36N60B3D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
GenX3
w/ Diode
Medium-Speed Low-Vsat PT IGBT
for 5 - 40kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C Unless Otherwise Specified)
TM
I
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
V
V
I
Test Conditions
Test Conditions
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 250μA, V
= 250μA, V
600V IGBT
= 25°C to 150°C
= 25°C to 150°C, R
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= V
= 0V, V
= 30A, V
CES
, V
GE
VJ
GE
CE
GE
GE
= 125°C, R
= ± 20V
= 0V
= V
= 15V, Note 1
= 0V
GE
GE
= 1MΩ
G
= 5Ω
T
J
=125°C
IXGH36N60B3D1
Min.
600
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
V
Typ.
CE
1.5
I
1.13/10
CM
≤ V
± 20
± 30
= 80
200
250
150
300
600
600
260
36
30
CES
6
Max.
1.75
±100
300
5.0
1.8
Nm/lb.in.
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
TO-247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
≤ ≤ ≤ ≤ ≤
= 600V
= 36A
C
TAB = Collector
(TAB)
1.8V
= Collector
DS99903B(07/09)

Related parts for IXGH36N60B3D1

IXGH36N60B3D1 Summary of contents

Page 1

... V GE(th CES CE CES GE = ± 20V 0V, V GES 30A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGH36N60B3D1 Maximum Ratings 600 = 1MΩ 600 GE ± 20 ± 200 = 5Ω ≤ CES 250 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 Characteristic Values Min. ...

Page 2

... Characteristic Values Min. Typ 150° 100° 30V 100°C 100 J 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH36N60B3D1 TO-247 Outline (IXGH) Max Dim. Millimeter mJ Min. Max. 200 ns A 4.7 A 2.2 160 2 1.0 1 ...

Page 3

... GE © 2009 IXYS CORPORATION, All Rights Reserved = 15V GE 13V 11V 1.6 2.0 2 15V GE 13V 11V 1.6 2.0 2 25º IXGH36N60B3D1 Fig. 2. Extended Output Characteristics @ 25ºC 300 V = 15V GE 270 13V 11V 240 210 9V 180 150 120 Volts CE Fig. 4. Dependence of V Junction Temperature 1 ...

Page 4

... C ies oes res 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH36N60B3D1 Fig. 8. Gate Charge V = 300V 30A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J Ω < 10V / ns 150 200 250 300 ...

Page 5

... IXGH36N60B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V T = 125º 400V Amperes C Fig ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 110 60 100 100 110 120 d(on Ω 15V 400V 105 115 125 IXGH36N60B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on ) Ω 15V 400V 125º 25º Amperes IXYS REF: G_36N60B3(55) 5-05-08-C ...

Page 7

... Fig. 22. Reverse recovery charge Q F versus -di / 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25. Recovery time t RM -di /dt F 0.01 0.1 IXGH36N60B3D1 100° 300V 60A 30A 15A A/μs 1000 0 200 400 /dt F Fig. 23. Peak reverse current I r versus - 100°C = 100°C ...

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