IXGQ28N120B IXYS, IXGQ28N120B Datasheet - Page 5

• Manufacturer Part Number: IXGQ28N120B
• Description: IGBT 1200V 50A TO-3P
• Manufacturer: IXYS

Specifications of IXGQ28N120B

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 28A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3P
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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10000
1000
550
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450
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350
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250
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150
100
100
0.50
1.00
0.10
50
10
25
0
1
t
t
R
V
V
Sw itching Tim e on Te m perature
d(off)
fi
35
Fig. 13. De pende nce of Turn-off
GE
CE
I
G
C
5
- - - - - -
f = 1 MHz
= 5Ω
= 28A
= 960V
= 15V
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
15
V
65
C E
75
20
- Volts
I
C
= 14A
85
Fig. 16. Maxim um Trans ient Therm al Res istance
25
I
C
I
C
95
= 56A
= 14A
30
C
C
C
105 115 125
oes
res
10
ies
35
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
10
V
I
I
C
G
CE
= 28A
= 1 0mA
= 600V
20
100
Fig. 14. Gate Charge
Q
30
G
- nanoCoulombs
40
50
IXGQ28N120BD1
60
IXGQ 28N120B
70
80
90
1000
100