IXGQ28N120B IXYS, IXGQ28N120B Datasheet

IGBT 1200V 50A TO-3P

IXGQ28N120B

Manufacturer Part Number
IXGQ28N120B
Description
IGBT 1200V 50A TO-3P
Manufacturer
IXYS
Datasheet

Specifications of IXGQ28N120B

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 28A
Current - Collector (ic) (max)
50A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-3P
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
High Voltage IGBT with Diode
Symbol
V
I
I
V
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
GES
CES
CM
C25
C110
GE(th)
CE(sat)
JM
GEM
J
stg
CES
CGR
GES
C
d
Test Conditions
I
V
V
V
I
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque
C
C
CE
GE
CE
C
C
C
C
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= V
= 0 V
= 0 V, V
= 28A, V
CES
GE
J
GE
= 125°C, R
= ±20 V
= 15 V
CE
T
J
= V
= 25°C
GE
GE
G
= 1 MΩ
= 10 Ω
T=125°C
(T
J
= 25°C, unless otherwise specified)
28N120BD1
IXGQ 28N120B
IXGQ 28N120BD1
28N120B
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@0.8 V
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
2.9
2.8
I
CM
1200
1200
= 60
±20
±30
150
250
150
300
50
28
CES
max.
6
±100
5.0
3.5
D1
25
50
µA
µA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
V
I
V
t
TO-3P (IXGQ)
G = Gate
E = Emitter
Features
Advantages
C25
fi(typ)
International standard package
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
CES
CE(sat)
G
C
E
= 1200 V
=
= 160 ns
= 3.5 V
C = Collector
TAB = Collector
50 A
DS99135(12/03)
RM
(TAB)

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IXGQ28N120B Summary of contents

Page 1

... 25°C CES CE CES ± GES 28A CE(sat Note 2 © 2003 IXYS All rights reserved IXGQ 28N120B IXGQ 28N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 150 = 10 Ω @0.8 V CES 250 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 2

... Switching times may increase for V higher T or increased Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 3

... T = 25º IXGQ28N120B IXGQ 28N120BD1 Fig. 2. Extended Output Characte ristics @ 17V GE 15V 13V 11V Volts C E Fig pende nce of V CE(sat) Tem perature V = 15V 100 T - Degrees Centigrade J Fig. 6. Input Adm ittance T = 125º ...

Page 4

... T = 25º 700 600 500 400 300 I = 56A I = 28A C C 200 100 100 4,850,072 4,931,844 5,034,796 5,063,307 4,835,592 4,881,106 5,017,508 5,049,961 IXGQ28N120B IXGQ 28N120BD1 Fig. 8. Dependence of Turn-off Ene rgy Loss 125º 15V 960V Ohms G Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature R = 5Ω ...

Page 5

... C E 1.00 0.50 0.10 1 © 2003 IXYS All rights reserved I = 14A 56A 14A 105 115 125 C ies C oes C res Fig. 16. Maxim um Trans ient Therm al Res istance 10 Pulse Width - milliseconds IXGQ 28N120B IXGQ28N120BD1 Fig. 14. Gate Charge 600V 28A 0mA nanoCoulombs G 100 100 ...

Page 6

... 110 100 90 0 200 400 600 800 A/µs -di /dt F Fig. 21 Recovery time t versus - 0.01 0.1 t 4,850,072 4,931,844 5,034,796 5,063,307 4,835,592 4,881,106 5,017,508 5,049,961 IXGQ 28N120B IXGQ28N120BD1 100° 600V 20A 10A 1000 0 200 400 600 Fig. 19 Peak reverse current I r versus -di ...

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