IXGP15N120C IXYS, IXGP15N120C Datasheet - Page 5

• Manufacturer Part Number: IXGP15N120C
• Description: IGBT 30A 1200V TO-220AB
• Manufacturer: IXYS

Specifications of IXGP15N120C

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.8V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 30
• Ic90, Tc=90°c, Igbt, (a): 15
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 115
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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350
300
250
200
150
100
0.1
50
0.6
16
14
12
10
1
8
6
4
2
0
25
1
0
t
t
R
V
V
d(off)
fi
Sw itching Tim e on Tem perature
35
GE
CE
Fig. 13. Depe ndence of Turn-Off
G
10
V
I
I
-
C
G
= 10Ω
CE
= 15V
= 960V
- - - - -
= 15A
= 10mA
45
= 600V
20
Fig. 15. Gate Charge
T
J
55
Q
- Degrees Centigrade
30
G
- nanoCoulombs
65
I
C
40
= 7.5A
30A
15A
75
I
50
C
= 30A
85
Fig. 17. Maxim um Transient Therm al Re sistance
7.5A
15A
60
95
70
10
105 115 125
80
Pulse Width - milliseconds
90
10000
1000
100
10
70
60
50
40
30
20
10
0
100
0
f = 1 MHz
5
T
R
dV/dT < 10V/ns
300
J
G
= 125
100
= 10Ω
Fig. 16. Capacitance
Fig. 14. Reve rse -Bias
Safe Operating Area
10
Q
º
500
C
G
15
- nanoCoulombs
V
CE
700
- Volts
20
IXGA 15N120C
IXGP 15N120C
25
900
C
C
C
res
30
oes
ies
1100
35
1300
1000
40