STGW39NC60VD STMicroelectronics, STGW39NC60VD Datasheet - Page 3

• Manufacturer Part Number: STGW39NC60VD
• Description: IGBT N-CHAN 600V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW39NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V/1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5741

STGW39NC60VD
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. Vclamp = 80%(V
3. Pulse width limited by max. junction temperature allowed
Table 3.
I
C
Symbol
(
Symbol
R
R
R
T
I
I
V
P
I
CP
C
CL
I
I
V
thj-case
thj-case
thj-amb
C
FSM
C
CES
)
TOT
I
T
GE
F
(1)
(1)
=
(2)
j
(3)
---------------------------------------------------------------------------------------------------
R
THJ C
–
Absolute maximum ratings
Thermal resistance
Collector-emitter voltage (V
Collector current (continuous) at 25 °C
Collector current (continuous) at 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge non repetitive forward current
(tp=10 ms sinusoidal)
Total dissipation at T
Operating junction temperature
Thermal resistance junction-case (IGBT) max
Thermal resistance junction-case (diode) max
Thermal resistance junction-ambient max
×
T
V
JMAX
CESAT MAX
CES
) , Tj = 150 °C, R
–
T
(
C
)
(
T
C
,
Parameter
I
C
Parameter
)
C
= 25 °C
G
= 10 Ω, V
GE
= 0)
C
GE
= 25 °C
= 15 V
– 55 to 150
Value
± 20
Value
600
220
220
120
250
80
40
30
0.5
1.5
50
Electrical ratings
°C/W
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
A
A
3/15