IXGH48N60B3 IXYS, IXGH48N60B3 Datasheet - Page 4
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IXGH48N60B3
Manufacturer Part Number
IXGH48N60B3
Description
IGBT 280A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheet
1.IXGA48N60B3.pdf
(6 pages)
Specifications of IXGH48N60B3
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 32A
Current - Collector (ic) (max)
48A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
280
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
116
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.30
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH48N60B3D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions and dimensions.
10,000
1,000
1.00
0.10
0.01
100
80
70
60
50
40
30
20
10
10
0.00001
0
0
0
f
= 1 MHz
20
5
Fig. 7. Transconductance
10
40
Fig. 9. Capacitance
T
0.0001
J
I
= - 40ºC
15
C
- Amperes
60
V
CE
- Volts
20
25ºC
80
125ºC
C res
C ies
C oes
25
Fig. 11. Maximum Transient Thermal Impedance
100
0.001
30
120
35
Pulse Width - Seconds
140
40
0.01
140
120
100
16
14
12
10
80
60
40
20
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
150
T
R
dV / dt < 10V / ns
C
G
CE
J
G
= 40A
= 10mA
= 125ºC
= 5Ω
= 300V
IXGA48N60B3 IXGP48N60B3
20
200
0.1
250
Fig. 8. Gate Charge
40
Q
300
G
V
- NanoCoulombs
CE
350
- Volts
60
400
IXYS REF: G_48N60B3D1(56) 05-05-08-A
IXGH48N60B3
1
450
80
500
550
100
600
10
120
650