IXGH48N60B3 IXYS, IXGH48N60B3 Datasheet - Page 3
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IXGH48N60B3
Manufacturer Part Number
IXGH48N60B3
Description
IGBT 280A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheet
1.IXGA48N60B3.pdf
(6 pages)
Specifications of IXGH48N60B3
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 32A
Current - Collector (ic) (max)
48A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
280
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
116
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.30
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH48N60B3D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2008 IXYS CORPORATION, All rights reserved
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
6
0.4
0.4
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
7
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.8
0.8
I
C
8
= 80A
40A
20A
V
V
9
CE
GE
1.2
1.2
V
@ 125ºC
@ 25ºC
CE
- Volts
- Volts
10
- Volts
V
GE
1.6
1.6
V
GE
11
= 15V
13V
11V
= 15V
13V
11V
12
2.0
2.0
T
J
13
7V
5V
= 25ºC
9V
2.4
2.4
14
9V
7V
5V
2.8
2.8
15
300
270
240
210
180
150
120
200
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
80
60
40
20
0
0
-50
4.0
0
V
GE
V
GE
4.5
Fig. 2. Extended Output Characteristics
= 15V
-25
T
2
= 15V
13V
11V
J
IXGA48N60B3 IXGP48N60B3
= 125ºC
Fig. 4. Dependence of V
5.0
- 40ºC
25ºC
4
0
Fig. 6. Input Admittance
Junction Temperature
9V
7V
5.5
T
J
- Degrees Centigrade
25
6
6.0
V
CE
V
@ 25ºC
GE
- Volts
6.5
50
8
- Volts
7.0
10
IXGH48N60B3
75
I
I
CE(sat)
I
7.5
C
C
C
= 40A
= 80A
= 20A
100
12
8.0
on
125
14
8.5
150
9.0
16