STGF7NC60HD STMicroelectronics, STGF7NC60HD Datasheet - Page 8
![IGBT N-CHAN 10A 600V TO220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STGF7NC60HD
Manufacturer Part Number
STGF7NC60HD
Description
IGBT N-CHAN 10A 600V TO220FP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGB7NC60HDT4.pdf
(15 pages)
Specifications of STGF7NC60HD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 7A
Current - Collector (ic) (max)
10A
Power - Max
25W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
10A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
25W
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
10 A
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
10 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-4354-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGF7NC60HD
Manufacturer:
FUJI
Quantity:
30 000
Part Number:
STGF7NC60HD
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STGF7NC60HD,STGF10NC60HD,GF7NC60HD,GF10NC60HD
Manufacturer:
ST
0
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
8/15
Figure 19: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
considering T = T
2) The conduction losses are:
with 50% of duty cycle, V
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
4) Typical values @ 125°C for switching losses are
used (test conditions: V
R
ergy is included in the E
tail of the collector current is included in the E
measurements (see note 3).
G
= 3.3 Ohm). Furthermore, diode recovery en-
f
MAX
P
SW
P
P
= (P
C
J
D
= (E
= I
- T
= T / R
D
C
C
ON
ON
- P
CE
* V
= 125 °C- 75 °C = 50°C
C
(see note 2), while the
+ E
CE(SAT)
= 390V, V
) / (E
CESAT
THJ-C
OFF
ON
) * freq.
*
typical value
+ E
GE
OFF
= 15V,
)
OFF