IRG4BC20K-SPBF International Rectifier, IRG4BC20K-SPBF Datasheet

IGBT N-CHAN 600V 16A D2PAK

IRG4BC20K-SPBF

Manufacturer Part Number
IRG4BC20K-SPBF
Description
IGBT N-CHAN 600V 16A D2PAK
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4BC20K-SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 9A
Current - Collector (ic) (max)
16A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
16A
Gate To Emitter Voltage (max)
±20V
Package Type
D2PAK
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
600V
Collector Emitter Saturation Voltage Vce(sat)
2.8V
Continuous Collector Current Ic
16A
Current Rating
16A
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Benefits
Thermal Resistance
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBTs offer highest power
• This part replaces the IRGBC20K-S and
Absolute Maximum Ratings
Features
Features
Features
Features
Features
V
I
I
I
I
t
V
E
P
P
T
T
R
R
R
Wt
density motor controls possible
C
C
CM
LM
sc
V
HEXFRED
Diode and IGBT
t
switching speed
distribution and higher efficiency than previous
generations
minimum EMI / Noise and switching losses in the
www.irf.com
IRGBC20M-S devices
J
STG
sc
CES
GE
ARV
D
D
@ T
@ T
GE
JC
CS
JA
@ T
@ T
=10µs, @360V V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
ultrafast, ultrasoft recovery diodes for
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)V
Weight
CE
(start), T
Parameter
Parameter
J
= 125°C,
G
n-channel
300 (0.063 in. (1.6mm) from case)
Typ.
1.44
–––
–––
0.5
C
E
10 lbf•in (1.1N•m)
-55 to +150
D P a k
Max.
600
±20
9.0
16
32
32
10
29
60
24
2
Short Circuit Rated
@V
V
CE(on) typ.
Max.
V
GE
UltraFast IGBT
–––
–––
2.1
40
CES
= 15V, I
= 600V
C
2.27V
= 9.0A
Units
4/24/2000
°C/W
Units
g
mJ
µs
°C
W
V
A
V
1

Related parts for IRG4BC20K-SPBF

IRG4BC20K-SPBF Summary of contents

Page 1

Features Features Features Features Features • High short circuit rating optimized for motor control, t =10µs, @360V V (start 15V GE • Combines low conduction losses with high switching speed • Latest generation design provides ...

Page 2

... IRG4BC20K-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES I Gate-to-Emitter Leakage Current ...

Page 3

... Fig Typical Output Characteristics www.irf.com uty c yc le: 50 125° 90°C s ink G ate driv e as spec ified tio Frequency (kHz) (Load Current = I of fundamental) RMS 100  150 150 15V Fig Typical Transfer Characteristics IRG4BC20K-S T ria 55° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4BC20K 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 15V PULSE WIDTH 4.0 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...

Page 5

... Gate Resistance ( G G Fig Typical Switching Losses vs. Gate Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4BC20K-S = 400V = 9. Total Gate Charge (nC) G Gate-to-Emitter Voltage 50 = Ohm = 15V = 480V  9. 4 100 120 140 160 ° Junction Temperature ( ...

Page 6

... IRG4BC20K Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Tape & Reel Information 2 D Pak (. (. 0. AX EIA SIO LIM EAS IST 100 SAFE OPERATING AREA 1 1 5 5 1 ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4BC20K-S 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BC20K-S Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. ( See fig. 13b ) 80%( 20V 10µ CES GE (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature Pak Package Outline (. (. (. (. (. (. (. (. (. (. (. (. (. & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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