IXGP7N60BD1 IXYS, IXGP7N60BD1 Datasheet
IXGP7N60BD1
Manufacturer Part Number
IXGP7N60BD1
Description
IGBT 600V 14A FRD TO-220
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGP7N60BD1.pdf
(2 pages)
Specifications of IXGP7N60BD1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 7A
Current - Collector (ic) (max)
14A
Power - Max
80W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
14
Ic90, Tc=90°c, Igbt, (a)
7
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2
Tfi, Typ, Tj=25°c, Igbt, (ns)
150
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.6
Rthjc, Max, Igbt, (°c/w)
2.3
If, Tj=110°c, Diode, (a)
7
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
HiPerFAST
with Diode
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
C25
C90
CM
CES
GES
J
JM
stg
CGR
GEM
C
GE(th)
CE(sat)
CES
GES
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ 0.8 V
T
Mounting torque, (TO-220)
TO-220
TO-263
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
GE
J
J
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
GE
CES
VJ
= 15 V
= ±20 V
IGBT
= 125°C, R
CE
GE
= V
= 0 V
GE
T
T
GE
J
J
= 1 M
= 25°C
= 125°C
G
= 18
(T
Advanced Technical Information
J
= 25°C, unless otherwise specified)
CES
M3
M3.5
IXGA 7N60BD1
IXGP 7N60BD1
600
2.5
min.
Characteristic Values
Maximum Ratings
I
-55 ... +150
-55 ... +150
CM
typ.
1.8
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
= 14
600
600
±20
±30
300
80
14
56
7
max.
±100
150
100
750
5.5
2.0
4
2
nA
V
V
V
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
A
A
g
g
V
I
V
t
Features
Applications
Advantages
G = Gate,
E = Emitter,
C25
fi
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
High current handling capability
HiPerFAST
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Suitable for surface mounting
CES
CE(sat)
TO-263 AA (IXGA)
TO-220AB (IXGP)
TM
G
G C
HDMOS
C = Collector,
TAB = Collector
= 600
=
= 2.0
=
E
E
TM
DS98977(12/02)
14 A
150ns
process
C (TAB)
V
V
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IXGP7N60BD1 Summary of contents
Page 1
... GE(th 0.8 • V CES CE CES ±20 V GES CE(sat) C C90 GE © 2002 IXYS All rights reserved Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 Maximum Ratings 600 = 1 M 600 GE ±20 ± CES 80 -55 ... +150 150 -55 ... +150 300 M3 0.45/4 Nm/lb.in. M3.5 0.55/5 Nm/lb.in. Characteristic Values (T = 25° ...
Page 2
... 100 V; I =25A; - < 0. -di/ Diode thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 500 0 CES 100 200 off ...