IXGP16N60B2 IXYS, IXGP16N60B2 Datasheet - Page 6

• Manufacturer Part Number: IXGP16N60B2
• Description: IGBT 600V 40A TO-220
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGP16N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 12A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 16
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.38
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
60
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
25
20
I
Fig. 20. Inductive Turn-on Switching Times vs.
T
V
Fig. 18. Inductive Turn-on Switching Times vs.
t
t
R
V
C
r i
J
CE
r i
CE
G
35
= 24A
= 125ºC, V
= 22
30
= 400V
= 400V
Ω
45
, V
40
GE
GE
t
I
t
d(on)
= 15V
= 15V
d(on)
55
C
Junction Temperature
= 12A
T
J
- - - -
- - - -
Gate Resistance
50
- Degrees Centigrade
R
65
G
- Ohms
60
75
85
70
95
80
I
I
C
C
= 12A
= 24A
105
90
115
100
125
55
50
45
40
35
30
25
20
15
10
24
23
22
21
20
19
18
17
16
15
14
55
50
45
40
35
30
25
20
15
12
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
13
r i
G
CE
= 22
= 400V
14
Ω
, V
GE
15
t
d(on)
= 15V
16
Collector Current
- - - -
17
I
C
T
J
18
- Amperes
= 25ºC, 125ºC
19
20
IXGA16N60B2
IXGP16N60B2
21
22
IXYS REF: IXG_16N60B3D1(3D)8-02-10
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