IRG4BC30UPBF International Rectifier, IRG4BC30UPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4BC30UPBF
• Description: IGBT UFAST 600V 23A TO220AB
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4BC30UPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 12A
• Current - Collector (ic) (max): 23A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Capacitance, Gate: 1100 pF
• Current, Collector: 23 A
• Energy Rating: 10 mJ
• Package Type: TO-220AB
• Polarity: N-Channel
• Power Dissipation: 100 W
• Resistance, Thermal, Junction To Case: 1.2 °C/W
• Speed, Switching: 8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.52 V
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 23A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4BC30UPBF

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2000
1600
1200
0.5
0.4
0.3
0.2
800
400
0
0
V
V
T
1
I
CC
GE
J
C
V
= 12A
CE
= 480V
= 15V
= 25°C
C
C
C
10
ies
oes
res
, Collector-to-Emitter Voltage (V)
R , Gate Resistance ( Ω )
G
V
C
C
C
GE
ies
res
oes
20
= 0V,
= C
= C
= C
ge
gc
ce
30
+ C
+ C
10
gc
gc
f = 1MHz
, C
40
ce
SHORTED
50
60
100
A
A
0.1
10
1
20
16
12
-60
8
4
0
0
R
V
V
V
G
GE
CC
I
-40
CE
C
= 15V
= 480V
= 23 Ω
= 12A
= 400V
-20
IRG4BC30UPbF
T , Junction Temperature (°C)
Q , Total Gate Charge (nC)
J
10
g
0
20
20
40
60
30
80
100 120 140 160
I = 24A
I
I = 12A
C
C
C
40
= 6.0A
5
50
A
A