IRG4BC30UPBF International Rectifier, IRG4BC30UPBF Datasheet - Page 3
![IGBT UFAST 600V 23A TO220AB](/photos/5/40/54079/to-220ab_sml.jpg)
IRG4BC30UPBF
Manufacturer Part Number
IRG4BC30UPBF
Description
IGBT UFAST 600V 23A TO220AB
Manufacturer
International Rectifier
Type
Ultrafastr
Specifications of IRG4BC30UPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
23A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Capacitance, Gate
1100 pF
Current, Collector
23 A
Energy Rating
10 mJ
Package Type
TO-220AB
Polarity
N-Channel
Power Dissipation
100 W
Resistance, Thermal, Junction To Case
1.2 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.52 V
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
23A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4BC30UPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BC30UPBF
Manufacturer:
IR
Quantity:
5 000
www.irf.com
100
35
30
25
20
15
10
0.1
10
5
0
1
0.1
0.1
V
Square wave:
CE
, Collector-to-Emitter Voltage (V)
60% of rated
Ideal diodes
I
voltage
1
T = 25°C
J
V
20µs PULSE WIDTH
GE
= 15V
T = 150°C
J
1
RMS
f, Frequency (kHz)
10
A
100
0.1
10
1
5
T = 150°C
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 21W
J
sink
J
V
6
IRG4BC30UPbF
= 90°C
GE
10
, Gate-to-Emitter Voltage (V)
7
T = 25°C
J
8
PK
Triangular wave:
9
V
5µs PULSE WIDTH
CC
Clamp voltage:
80% of rated
= 10V
I
10
11
100
12
3
A
A