STGP3NC120HD STMicroelectronics, STGP3NC120HD Datasheet - Page 4

• Manufacturer Part Number: STGP3NC120HD
• Description: IGBT N-CH 1200V 7A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP3NC120HD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 14A
• Power - Max: 75W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Electrical characteristics
2
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Electrical characteristics
T
Table 4.
1. Pulse duration: 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
J
Symbol
V
V
(BR)CES
g
= 25 °C unless otherwise specified.
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
fs
Q
oes
ies
res
ge
gc
(1)
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
GE
Static electrical characteristics
Dynamic
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
I
V
V
V
V
V
V
V
V
I
C
C
GE
GE
GE
CE
CE
CE
CE
CE
CE
= 3 A,V
= 1 mA
= V
= 15 V, I
= 15 V, I
= 1200 V
= 1200 V, T
= 25 V
=± 20 V
= 25 V, f = 1 MHz, V
= 960 V,
GE
Test conditions
Test conditions
GE
, I
,
C
I
C
C
=15 V
C
= 250µA
= 3 A
= 3 A, T
= 3 A
J
=125 °C
J
=125 °C
GE
=0
1200
Min.
Min.
2
-
-
Typ.
Typ.
470
2.3
2.2
45
24
10
6
3
4
± 100
Max. Unit
Max. Unit
2.8
50
5
1
-
-
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S