STGD7NB120S-1 STMicroelectronics, STGD7NB120S-1 Datasheet

IGBT 1200V 10A 55W IPAK

STGD7NB120S-1

Manufacturer Part Number
STGD7NB120S-1
Description
IGBT 1200V 10A 55W IPAK
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGD7NB120S-1

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 7A
Current - Collector (ic) (max)
10A
Power - Max
55W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
IPak, TO-251 (2 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGD7NB120S-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STGD7NB120S-1
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Aug 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STGD7NB120S-1
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
OFF LOSSES INCLUDE TAIL CURRENT
HIGH CURRENT CAPABILITY
MOTOR CONTROL
LIGHT DIMMER
INTRUSH CURRENT LIMITATION
Symbol
I
V
V
CM
P
V
T
CES
ECR
I
I
TOT
T
GE
stg
C
C
TYPE
j
( )
Collector-Emitter Voltage (V
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuos) at T
Collector Current (continuos) at T
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
IGBTs, with outstanding
1200 V
V
CES
V
< 2.1 V
CE(sat)
C
Parameter
= 25°C
GS
cesat
= 0)
7 A
C
C
I
C
)
= 25°C
= 100°C
N-CHANNEL 7A - 1200V - IPAK
INTERNAL SCHEMATIC DIAGRAM
STGD7NB120S-1
PowerMESH™ IGBT
( ) Pulse width limited by safe operating area
–65 to 150
IPAK
Value
1200
±20
150
0.4
20
10
20
55
7
PRELIMINARY DATA
1
2
3
W/°C
Unit
°C
°C
W
V
V
V
A
A
A
1/6

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STGD7NB120S-1 Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. N-CHANNEL 7A - 1200V - IPAK I CE(sat) C < 2 cesat Parameter = 25° 100° 25°C C STGD7NB120S-1 PowerMESH™ IGBT PRELIMINARY DATA IPAK INTERNAL SCHEMATIC DIAGRAM Value 1200 20 ± 0.4 –65 to 150 ...

Page 2

... STGD7NB120S-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-h Thermal Resistance Case-heatsink Typ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Collectro-Emitter Breakdown V BR(CES) Voltage Emitter-Collectro Breakdown V BR(ECR) Voltage Collector cut-off I CES ( Gate-Emitter Leakage ...

Page 3

... Turn-off Switching Loss off Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) Test Conditions Min 960 960 125 °C STGD7NB120S-1 Typ. Max. Unit 4.9 s 2 7.5 s 5 3/6 ...

Page 4

... STGD7NB120S-1 Fig. 1: Gate Charge test Circuit 4/6 Fig. 2: Test Circuit For Inductive Load Switching ...

Page 5

... STGD7NB120S-1 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 0068771-E ...

Page 6

... STGD7NB120S-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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