STGF10NC60HD STMicroelectronics, STGF10NC60HD Datasheet - Page 6

• Manufacturer Part Number: STGF10NC60HD
• Description: IGBT N-CH 10A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 24W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 9A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical characteristics
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Table 8.
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
rr
rr
F
rr
rr
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
Parameter
I
I
I
di/dt = 100 A/μs
(see Figure 21)
I
T
(see Figure 21)
F
F
F
F
C
= 5 A
= 5 A, T
= 5 A, V
= 5 A,V
=125 °C, di/dt = 100 A/μs
Test conditions
R
C
R
= 40 V,
= 125 °C
= 40 V,
Min.
Typ.
1.85
1.7
1.3
22
14
33
30
2
Max.
2.45
Unit
nC
nC
ns
ns
V
V
A
A