IXGH36N60B3C1 IXYS, IXGH36N60B3C1 Datasheet - Page 6

• Manufacturer Part Number: IXGH36N60B3C1
• Description: IGBT B3 36A 600V TO-247
• Manufacturer: IXYS
• Series: GenX3SC™r

Specifications of IXGH36N60B3C1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 36
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (°c/w): 0.5
• If, Tj=110°c, Diode, (a): 20
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
1.00
0.10
0.01
0.00
150
135
120
105
80
70
60
50
40
30
20
10
90
75
60
45
30
15
0.00001
0
0
25
0
t
T
V
Fig. 18. Inductive Turn-on Switching Times vs.
10
Fig. 20. Inductive Turn-on Switching Times vs.
r i
J
CE
35
t
R
V
= 125ºC, V
r i
CE
G
= 400V
= 5
I
= 400V
C
20
Ω
= 30A
45
, V
30
GE
GE
t
d(on)
= 15V
55
T
= 15V
t
Junction Temperature
d(on)
J
40
- Degrees Centigrade
- - - -
Gate Resistance
- - - -
R
65
50
G
- Ohms
0.0001
60
75
70
I
85
C
= 60A
80
Fig. 22. Maximum Transient Thermal Impedance for Diode
95
I
C
90
= 15A
I
I
I
105
C
C
C
100
= 60A
= 30A
= 15A
110
115
0.001
120
125
110
100
90
80
70
60
50
40
30
20
10
24
23
22
21
20
19
18
17
16
Pulse Width - Second
70
60
50
40
30
20
10
40
35
30
25
20
15
10
0
5
0
15
0.0
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
r i
CE
G
20
= 5
0.01
= 400V
Fig. 21. Forward Current vs. Forward Voltage
Ω
0.5
, V
25
T
J
GE
= 125ºC, 25ºC
= 15V
t
d(on
30
Collector Current
1.0
)
- - - -
I
C
- Amperes
IXGH36N60B3C1
35
V
F
T
J
- Volts
1.5
= 25ºC
40
0.1
45
2.0
T
J
= 125ºC
50
IXYS REF: G_36N60B3C1(55)6-05-09
2.5
55
60
24
23
22
21
20
19
18
17
3.0
1