IXGH36N60B3C1 IXYS, IXGH36N60B3C1 Datasheet
IXGH36N60B3C1
Specifications of IXGH36N60B3C1
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IXGH36N60B3C1 Summary of contents
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... CES CE CES GE = ± 20V 0V, V GES 30A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGH36N60B3C1 Maximum Ratings 600 = 1MΩ 600 GE ± 20 ± 200 = 5Ω ≤ V CES 250 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 Characteristic Values Min ...
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... Characteristic Values Min. Typ. 1. 125°C 1.80 J (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH36N60B3C1 TO-247 Outline Max Dim. Millimeter mJ Min. Max. 200 ns A 4.7 A 2.2 160 2 1.0 1.50 ...
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... V = 15V GE 13V 1.30 11V 9V 1.20 7V 1.10 1.00 5V 0.90 0.80 1.6 2.0 2.4 240 T = 25ºC J 200 160 120 IXGH36N60B3C1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance ...
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... C ies oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH36N60B3C1 Fig. 8. Gate Charge V = 300V 30A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J Ω < 10V / ns 150 200 250 300 ...
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... V = 15V 400V 200 CE 180 180 160 160 140 140 120 120 100 100 IXGH36N60B3C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 125ºC, 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ...
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... I = 60A 30A 15A 105 115 125 Fig. 22. Maximum Transient Thermal Impedance for Diode 0.001 Pulse Width - Second IXGH36N60B3C1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d( Ω 15V 400V 125ºC, 25º Amperes C Fig. 21. Forward Current vs. Forward Voltage T = 25ºC ...