IXGH30N60C3C1 IXYS, IXGH30N60C3C1 Datasheet - Page 5

• Manufacturer Part Number: IXGH30N60C3C1
• Description: IGBT C3 30A 600V TO-247
• Manufacturer: IXYS
• Series: GenX3SC™r

Specifications of IXGH30N60C3C1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): 13
• Rthjc, Max, Diode, (ºc/w): 1.1
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10,000
1,000
1.00
0.10
0.01
100
24
20
16
12
10
0.00001
8
4
0
0
0
f
= 1 MHz
10
5
20
10
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
30
15
T
J
= - 40ºC
I
V
C
CE
- Amperes
40
20
- Volts
25ºC
125ºC
50
25
Fig. 11. Maximum Transient Thermal Impedance for IGBT
C oes
C ies
C res
0.001
60
30
70
35
Pulse Width - Seconds
40
80
0.01
16
14
12
10
70
60
50
40
30
20
10
8
6
4
2
0
0
IXGA30N60C3C1 IXGP30N60C3C1
100
0
V
I
I
150
C
G
CE
T
R
dV / dt < 10V / ns
= 20A
= 10 mA
J
G
= 300V
= 125ºC
5
= 5Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
10
0.1
250
300
Fig. 8. Gate Charge
Q
15
G
- NanoCoulombs
V
350
CE
20
- Volts
IXGH30N60C3C1
400
1
25
450
500
30
IXYS REF: G_30N60C3C1(4D)6-03-09
550
35
600
10
650
40