IXGT32N120A3 IXYS, IXGT32N120A3 Datasheet - Page 5

• Manufacturer Part Number: IXGT32N120A3
• Description: IGBT PT 1200V 75A TO-268
• Manufacturer: IXYS

Specifications of IXGT32N120A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 32A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 1240
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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16
14
12
10
8
6
4
2
0
10
50
0
Fig. 13. Resistive Turn-on Switching Times
Fig. 15. Resistive Turn-off Switching Times
t
T
V
r
J
CE
V
I
I
= 125ºC, V
14
C
G
60
CE
10
= 960V
= 50A
= 10 mA
= 600V
18
70
t
I
d(on)
20
C
GE
= 150A
vs. Collector Current
vs. Gate Resistance
22
80
I
T
T
- - - -
C
J
J
= 20V
Fig. 17. Gate Charge
I
= 50A
= 125ºC
= 25ºC
C
30
Q
R
90
- Amperes
G
26
G
- NanoCoulombs
- Ohms
100 110 120 130 140 150
40
30
t
R
V
f
34
G
CE
50
= 10 Ω , V
= 960V
38
60
t
d(off)
GE
42
I
- - - -
C
= 20V
70
= 100A
46
80
50
200
190
180
170
160
150
140
130
120
110
67
64
61
58
55
52
49
46
43
40
37
90
1980
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1890
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1300
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40
20
0
200
10
25
Fig. 14. Resistive Turn-off Switching Times
Fig. 16. Resistive Turn-off Switching Times
I
C
Fig. 18. Reverse-Bias Safe Operating Area
T
R
dV / dT < 10V / ns
= 150A, 100A, 50V
J
G
35
t
R
V
15
= 150ºC
f
G
CE
= 20 Ω
= 10 Ω , V
= 960V
I
C
vs. Junction Temperature
45
400
= 50A, 100A, 150A
T
20
t
J
d(off)
vs. Gate Resistance
- Degrees Centigrade
55
GE
- - - -
25
R
= 20V
G
65
600
V
- Ohms
CE
30
75
- Volts
t
T
V
f
J
CE
85
35
= 125ºC, V
800
= 960V
95
40
t
d(off)
105
I
GE
C
= 100A
- - - -
45
1000
= 20V
115
50
125
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200
150
100
50
200
190
180
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150
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1200