IXGT32N120A3 IXYS, IXGT32N120A3 Datasheet
IXGT32N120A3
Specifications of IXGT32N120A3
Related parts for IXGT32N120A3
IXGT32N120A3 Summary of contents
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... CE CES ± GES 15V, Note 1 CE(sat) C C110 400 30V C GE © 2006 IXYS All rights reserved Preliminary Technical Information IXGH 32N120A3 IXGT 32N120A3 Maximum Ratings 1200 = 1 MΩ 1200 GE ± 20 ± 230 20 120 = 20 Ω 150 G CM < 0 CES 300 -55 ... +150 150 -40 ...
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... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. ...
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... V - Volts CE Fig. 5. Collector-to-Emitter Voltage v s. Gate-to-Emitter Voltage Volts GE © 2006 IXYS All rights reserved 250 V = 30V GE 225 25V 20V 200 175 150 15V 125 100 10V 5.5 = 30V GE 5 25V 20V 4.5 4 3.5 3 15V 2.5 10V 2 1.5 1 ...
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... V = 20V GE 300 V = 960V CE 280 260 240 220 200 180 160 Degrees Centigrade J IXYS reserves the right to change limits, test conditions and dimensions. 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 100 1200 1100 1000 900 800 700 600 500 400 ...
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... I - Amperes C Fig. 17. Gate Charge 600V 50A NanoCoulombs G © 2006 IXYS All rights reserved Fig. 14. Resistive Turn-off Switching Times 67 2000 64 1900 61 1800 58 1700 55 1600 I = 100A C 52 1500 49 1400 46 1300 43 1200 40 37 1100 Fig. 16. Resistive Turn-off Switching Times ...
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... Fig. 19. Capacitance 10,000 MHz 1,000 100 Volts CE 1.00 0.10 0.01 0.0001 0.001 IXYS reserves the right to change limits, test conditions and dimensions. C ies C oes C res Fig. 20. Maximum Transient Thermal Resistance 0.01 Pulse Width - Seconds IXGH 32N120A3 IXGT 32N120A3 0 ...