IXSP10N60B2D1 IXYS, IXSP10N60B2D1 Datasheet - Page 3

• Manufacturer Part Number: IXSP10N60B2D1
• Description: IGBT HS W/DIODE 600V 20A TO220AB
• Manufacturer: IXYS

Specifications of IXSP10N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 20A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 10
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.79
• Rthjc, Max, Igbt, (k/w): 1.25
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
7
6
5
4
3
2
1
0.5
0.5
10
Fig. 5. Collector-to-Em itter Voltage
11
1
1
Fig. 3. Output Characteristics
Fig. 1. Output Characte ristics
vs. Gate-to-Em itter voltage
1.5
12
1.5
13
2
V
V
2
C E
V
V
GE
@ 125
V
CE
G E
2.5
@ 25
14
GE
- Volts
= 17V
2.5
- Volts
- Volts
= 17V
15
3
º
º
C
I
C
C
3
= 20A
3.5
16
10A
T
5A
J
3.5
= 25
17
4
15V
13V
11V
9V
7V
15V
13V
11V
9V
º
C
4.5
4
18
4.5
19
5
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
35
30
25
20
15
10
18
16
14
12
10
5
0
8
6
4
2
0
-50
Fig. 2. Extended Output Characte ristics
0
6
T
1
V
Fig. 4. Dependence of V
J
-25
GE
= 125
7
Fig. 6. Input Adm ittance
-40
= 15V
25
2
º
º
º
0
C
C
C
T
8
J
3
- Degrees Centigrade
V
Tem perature
GE
25
V
V
9
@ 25
4
G E
= 17V
C E
IXSA 10N60B2D1
IXSP 10N60B2D1
- Volts
- Volts
50
10
5
º
C
6
11
75
13V
11V
15V
9V
CE(sat)
7
100
12
I
I
I
8
C
C
C
on
= 20A
= 10A
= 5A
125
13
9
150
10
14