IXSP10N60B2D1 IXYS, IXSP10N60B2D1 Datasheet
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Manufacturer Part Number
IXSP10N60B2D1
Description
IGBT HS W/DIODE 600V 20A TO220AB
Specifications of IXSP10N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
20A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
10
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.79
Rthjc, Max, Igbt, (k/w)
1.25
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXSP10N60B2D1
High Speed IGBT
with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body
M
Weight
Symbol
V
I
I
V
© 2004 IXYS All rights reserved
C25
C110
F(110)
CM
SC
CES
GES
stg
CGR
C
J
JM
GE(th)
CE(sat)
CES
GES
GEM
d
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, V
V
R
T
Mounting torque
Test Conditions
I
V
V
V
I
C
C
C
C
C
C
J
J
GE
GE
GE
CE
G
CE
= 150 Ω, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
t = 10s
= 750 µA, V
= V
= 0 V
= 0 V, V
= 10A, V
CES
CE
GE
J
GE
= 125°C, R
= 360 V, T
= ± 20 V
= 15 V
CE
= V
GE
GE
= 1 MΩ
G
J
GE
= 125°C
= 82Ω
= 20 V
(T
J
IXSA 10N60B2D1
IXSP 10N60B2D1
= 25°C, unless otherwise specified)
(TO-220)
min.
4.0
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
1.3/10 Nm/lb. in
± 20
= 20
± 30
100
300
250
600
600
150
20
10
11
30
CES
10
2
D1
± 100
max.
200
7.0
2.5
75
µs
°C
°C
°C
°C
°C
W
µA
µA
nA
V
V
V
V
A
A
A
A
A
g
V
V
TO-263 (IXSA)
TO-220AB (IXSP)
G = Gate
E = Emitter
Features
• International standard packages
• Guaranteed Short Circuit SOA
• Low V
• High current handling capability
• MOS Gate turn-on
• Fast fall time for switching speeds
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
capability
- for low on-state conduction losses
- drive simplicity
up to 20 kHz
V
I
V
C25
G C
CES
CE(sat)
CE(sat)
G
E
E
C = Collector
TAB = Collector
= 600 V
= 20 A
= 2.5 V
DS99193A(10/04)
C (TAB)
C (TAB)
Related parts for IXSP10N60B2D1
IXSP10N60B2D1 Summary of contents
... Symbol Test Conditions 750 µ GE(th CES CE CES ± GES 10A CE(sat © 2004 IXYS All rights reserved IXSA 10N60B2D1 IXSP 10N60B2D1 Maximum Ratings 600 = 1 MΩ 600 GE ± 20 ± 82Ω 0 CES = 125° 100 -55 ... +150 150 -55 ... +150 300 250 (TO-220) 1 ...
... A; -di/dt = 100 A/µ thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...
Fig. 1. Output Characte ristics º 17V 0.5 1 1 Volts C E Fig. 3. Output Characteristics º ...
Fig. 7. Trans conductance 4.5 4 3.5 3 º - 2.5 º º 125 C 1 Amperes C Fig. 9. Dependence ...
Fig. 13. Depe nde nce of Turn-off Sw itching Tim e on Tem pe rature 340 t d(off) 320 I = 20A 300 30Ω G 280 V = ...
... Fig. 24. Transient thermal resistance junction-to-case NOTE: Fig Fig. 23 shows typical values IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 250 T = 100° ...
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