STGP10NC60S STMicroelectronics, STGP10NC60S Datasheet - Page 6

• Manufacturer Part Number: STGP10NC60S
• Description: IGBT 600V 21A 62.5W TO220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP10NC60S

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.65V @ 15V, 5A
• Current - Collector (ic) (max): 21A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-10002-5

Electrical characteristics
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Figure 6.
Figure 8.
Figure 10. Switching losses vs. temperature
E (µJ)
V
600
500
400
300
200
100
(norm)
GE
V
1.15
1.05
0.95
0
CES
1.1
0.9
(V)
20
16
12
25
1
8
4
0
-50
0
Normalized breakdown voltage vs.
temperature
Gate charge vs. gate-emitter
voltage
E
E
OFF
ON
50
4
0
V
CC
I
C
= 480 V, V
= 5 A, R
V
8
CC
I
I
C
C
= 1 mA
= 480 V
75
= 5 A
50
G
=10 Ω
GE
12
= 15 V
100
100
16
Q
AM07875v1
AM07879v1
AM07877v1
G
T
20
T
J
(nC)
Doc ID 15931 Rev 2
J
150
(°C)
125
(°C)
Figure 7.
Figure 9.
Figure 11. Switching losses vs. gate
E (µJ)
C (pF)
600
500
400
300
200
100
800
600
400
200
(norm)
V
0
GE(th)
0
1.2
1.1
0.9
0.8
0.7
0.6
0
1
0
-50
C
res
Normalized gate threshold voltage
vs. temperature
Capacitance variations
resistance
E
E
40
OFF
ON
10
STGD10NC60S, STGP10NC60S
C
V
0
CC
oes
80
I
C
= 480 V, V
= 5 A, T
I
20
C
V
= 250 µA
GE
f = 1 MHz
V
120
GE
= V
50
J
= 0
CE
125 °C
GE
30
= 15 V
160
100
C
40
200
ies
AM07876v1
AM07880v1
AM07878v1
T
V
R
J
CE
150
(°C)
G
(V)
50
(Ω)