STGF10NC60SD STMicroelectronics, STGF10NC60SD Datasheet - Page 5

• Manufacturer Part Number: STGF10NC60SD
• Description: IGBT 600V 10A 25W TP220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NC60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.65V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.45 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 25 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10003-5

STGD10NC60SD, STGF10NC60SD
Table 6.
Table 7.
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
2. Turn-off losses included also include also the tail of the collector current.
Table 8.
Symbol
Symbol
(di/dt)
(di/dt)
Symbol
t
t
Eon
E
E
t
t
E
t
t
r
r
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature.
d
d
(V
(V
d(on)
d(on)
I
I
Q
Q
on
off
V
E
E
off
rrm
rrm
(
(
t
t
t
t
t
t
rr
rr
off
off
r
r
f
f
F
off
off
rr
rr
ts
ts
(2)
(1)
(2)
(1)
on
on
)
)
)
)
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 15847 Rev 2
I
I
I
di/dt=100 A/µs
Figure 20
I
T
Figure 20
V
R
Figure 17
V
R
T
Figure 17
F
F
F
F
V
R
Figure 19
V
R
T
Figure 19
V
R
Figure 19
V
R
T
Figure 19
J
=5 A
=5 A, T
=5 A, V
=5 A, V
J
J
J
CC
CC
CC
CC
cc
cc
G
G
=125 °C, di/dt=100 A/µs
G
G
G
G
= 125°C
= 125°C
= 125°C
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 390 V, I
= 390 V, I
Test conditions
= 480 V, I
= 480 V, I
= 390 V, I
= 390 V, I
Test conditions
Test conditions
J
R
R
=125 °C
=40 V,
=40 V,
GE
GE
GE
GE
GE
GE
C
C
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 5 A,
= 5 A,
= 15 V,
= 15 V,
= 5 A
= 5 A
= 5 A
= 5 A
Figure
Electrical characteristics
Min.
Min.
Min.
17. If the IGBT is offered
-
-
-
-
-
-
-
-
-
Typ.
1.65
1330
1000
Typ. Max. Unit
Typ.
340
400
540
630
1.3
2.1
22
14
34
35
100
160
205
165
250
310
4.5
60
90
2
19
18
4
Max.
2.45
Max. Unit
-
-
-
-
-
-
Unit
A/µs
A/µs
nC
nC
µJ
µJ
µJ
µJ
µJ
µJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
A
A
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