STGF10NC60KD STMicroelectronics, STGF10NC60KD Datasheet - Page 8

• Manufacturer Part Number: STGF10NC60KD
• Description: IGBT N-CH 600V 9A TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 9A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 25W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5114-5

Electrical characteristics
2.1
8/20
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 7.
Doc ID 11423 Rev 6
Figure 3.
Figure 5.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
STGx10NC60KD