STGB10NC60HDT4 STMicroelectronics, STGB10NC60HDT4 Datasheet - Page 9

• Manufacturer Part Number: STGB10NC60HDT4
• Description: IGBT N-CH 600V 20A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60HDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 65W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6184-2

STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
Figure 14. Thermal impedance for
Figure 16.
TO-220 / D²PAK / DPAK
Thermal impedance
for TO-220FP Figure 17. Emitter-collector diode
Figure 15. Turn-off SOA
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
I
FM
(A)
(typical values)
1
characteristics
T =125°C
j
(maximum values)
T =125°C
j
2
V
Electrical characteristics
FM
(V)
3
(maximum values)
T =25°C
j
4
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