IXLF19N250A IXYS, IXLF19N250A Datasheet - Page 4

• Manufacturer Part Number: IXLF19N250A
• Description: IGBT HIGH VOLTAGE 2500V 32AMP
• Manufacturer: IXYS

Specifications of IXLF19N250A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 19A
• Current - Collector (ic) (max): 32A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Channel Type: N
• Configuration: Single
• Collector Current (dc) (max): 32A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS i4-Pac
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): 19
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.9
• Tfi, Typ, Igbt, (ns): 250
• Eoff, Typ, Tj=125°c, Igbt, (mj): 30
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: ISOPLUS i4-PAC™ (3HV)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1750432

IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
E
E
Z
on
on
thJC
0.01
K/W
0.1
50
mJ
40
30
20
10
35
30
25
20
15
10
mJ
0.001
0
5
0
1
Fig. 11 Typ. transient thermal impedance
0
0
Fig. 7
Fig. 9
E
E
V
V
R
T
on
on
J
CE
GE
G
single pulse
V
V
I
T
C
= 125°C
= 47 Ω
J
= 1500 V
= ±15 V
CE
GE
= 19 A
= 125°C
50
= 1500 V
= ±15 V
Typ. turn on energy and switching
times versus collector current
Typ. turn on energy and switching
times versus gate resistor
10
0.01
100
20
0.1
150
R
30
I
G
C
t
1
200
t
t
d(on)
r
IXLF19N250A
40
Ω
t
t
d(on)
r
s
250
A
10
200
160
120
80
40
0
350
300
250
200
150
100
50
0
ns
ns
t
t
E
E
off
off
mJ
mJ
60
50
40
30
20
10
40
30
20
10
0
0
0
0
Fig. 8
Fig. 10
E
V
V
R
T
E
off
CE
GE
J
G
off
V
V
I
T
C
= 125°C
J
CE
GE
= 1500 V
= ±15 V
= 47 Ω
= 19 A
= 125°C
= 1500 V
= ±15 V
50
10
Typ. turn off energy and switching
times versus collector current
Typ. turn off energy and switching
times versus gate resistor
100
20
150
IXLF 19N250A
R
30
G
I
C
200
t
t
d(off)
f
40
t
t
Ω
d(off)
f
A
250
1200
1000
800
600
400
200
0
2000
1500
1000
500
0
ns
ns
4 - 4
t
t