IXLF19N250A IXYS, IXLF19N250A Datasheet - Page 3

• Manufacturer Part Number: IXLF19N250A
• Description: IGBT HIGH VOLTAGE 2500V 32AMP
• Manufacturer: IXYS

Specifications of IXLF19N250A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 19A
• Current - Collector (ic) (max): 32A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Channel Type: N
• Configuration: Single
• Collector Current (dc) (max): 32A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS i4-Pac
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): 19
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.9
• Tfi, Typ, Igbt, (ns): 250
• Eoff, Typ, Tj=125°c, Igbt, (mj): 30
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: ISOPLUS i4-PAC™ (3HV)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1750432

I
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
V
I
C
C
GE
100
80
60
40
20
80
70
60
50
40
30
20
10
20
15
10
A
V
A
0
0
5
0
0
6
0
Fig. 1 Typ. Output Characteristics
Fig. 3 Typ. Transfer Characteristics
Fig. 5 Typ. Gate Charge characteristics
T
J
V
= 25°C
1
CE
7
= 20 V
V
I
T
C
J
CE
2
8
= 1500 V
= 25°C
= 19 A
50
T
3
J
9
= 125°C
4
10
T
100
J
5
= 25°C
11
6
V
V
V
Q
GE
12
CE
GE
G
= 17 V
7
150
13
8
15 V
14
9
13 V
11 V
9 V
V
nC
15
V
I
I
CM
C
10000
1000
100
pF
80
60
40
20
50
40
30
20
10
10
A
A
0
0
0
0
0
Fig. 2 Typ. Output Characteristics
Fig. 4 Capacitance curves
Fig. 6 Reverse Biased Safe Operating Area
T
J
f = 1 Mhz
= 125°C
1
400
RBSOA
2
10
800 1200 1600 2000 2400
3
R
T
V
J
CEK
G
= 125°C
4
= 47Ω
< V
20
CES
5
V
IXLF 19N250A
15 V
GE
= 17 V
6
V
V
7
CE
CE
30
V
8
13 V
CE
V
9
C
C
11 V
C
9 V
ies
oes
res
V
3 - 4
40
V