IXBH40N160 IXYS, IXBH40N160 Datasheet - Page 4

• Manufacturer Part Number: IXBH40N160
• Description: BIMOSFET 1600V 33A TO-247AD
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH40N160

• Voltage - Collector Emitter Breakdown (max): 1600V
• Vce(on) (max) @ Vge, Ic: 7.1V @ 15V, 20A
• Current - Collector (ic) (max): 33A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.6kV
• Collector Current (dc) (max): 33A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1600 V
• Maximum Gate Emitter Voltage: 20 V
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 33 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 1600
• Ic25, Tc=25°c, (a): 33
• Ic90, Tc=90°c, (a): 20
• Vce(sat), Typ, Tj=25°c, (v): 6.2
• Tf Typ, Tj=25°c, (ns): 40
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
0.0001
0.001
0.01
0.1
0.00001
50
40
30
20
10
0
1
0
Fig. 7 Typ. Fall Time
Fig. 9 Typ. Transient Thermal Impedance
V
V
R
T
J
CE
GE
G
= 125°C
= 22Ω
= 960V
= 15V
10
I
C
- Amperes
0.0001
20
Single Pulse
30
40
0.001
Pulse Width - Seconds
400
300
200
100
0.01
0
Fig. 8 Typ. Turn Off Delay Time
0
V
V
I
T
C
J
CE
GE
= 20A
= 125°C
= 960V
= 15V
10
R
G
0.1
- Ohms
20
IXBH 40N160
30
IXBH40
40
1
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