IXBH40N160 IXYS, IXBH40N160 Datasheet
IXBH40N160
Manufacturer Part Number
IXBH40N160
Description
BIMOSFET 1600V 33A TO-247AD
Manufacturer
IXYS
Series
BIMOSFET™r
Specifications of IXBH40N160
Voltage - Collector Emitter Breakdown (max)
1600V
Vce(on) (max) @ Vge, Ic
7.1V @ 15V, 20A
Current - Collector (ic) (max)
33A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.6kV
Collector Current (dc) (max)
33A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector- Emitter Voltage Vceo Max
1600 V
Maximum Gate Emitter Voltage
20 V
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
33 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Vces, (v)
1600
Ic25, Tc=25°c, (a)
33
Ic90, Tc=90°c, (a)
20
Vce(sat), Typ, Tj=25°c, (v)
6.2
Tf Typ, Tj=25°c, (ns)
40
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.35
Package Style
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXBH40N160
Manufacturer:
IXYS
Quantity:
18 000
High Voltage BIMOSFET
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
M
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
C25
C90
CM
CES
GES
J
JM
stg
L
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 µH
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
GE
C
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
= 15 V, T
= 1 mA, V
= 2 mA, V
= 0.8·V
= 0 V
= 0 V, V
= I
C90
, V
CES
GE
GE
VJ
GE
CE
= 15 V
= 125°C, R
= ±20 V
= 0 V
= V
GE
GE
= 1 MΩ
G
= 22 Ω V
T
T
T
J
J
J
(T
= 25°C
= 125°C
= 125°C
TM
J
= 25°C, unless otherwise specified)
CE
= 0.8·V
1600
min.
CES
Characteristic Values
4
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
6.2
I
1.15/10Nm/lb.in.
CM
G
1600
1600
= 40
350
150
300
±20
±30
± 500
max.
33
20
40
6
400
7.1
7.8
8
3
mA
C
E
µA
nA
V
V
V
V
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
I
V
V
t
TO-247 AD
G = Gate,
E = Emitter,
Features
• International standard package
• High Voltage BIMOSFET
• Monolithic construction
• MOS Gate turn-on
• Intrinsic diode
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• CRT deflection
• Lamp ballasts
Advantages
• Easy to mount with 1 screw
• Space savings
• High power density
C25
fi
JEDEC TO-247 AD
- replaces high voltage Darlingtons
- lower effective R
- high blocking voltage capability
- very fast turn-off characteristics
- drive simplicity
power supplies
(isolated mounting screw hole)
CES
CE(sat)
and series connected MOSFETs
G
C
=
= 1600 V
=
=
E
IXBH 40N160
TAB = Collector
6.2 V
C = Collector,
33 A
40 ns
DS(on)
TM
typ.
C (TAB)
1 - 4
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IXBH40N160 Summary of contents
Page 1
... 0.8·V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved TM G Maximum Ratings 1600 = 1 MΩ 1600 GE ±20 ± Ω 0.8· CES CM 350 -55 ... +150 150 -55 ... +150 300 1 ...
Page 2
... Conditions Pulse test F F C90 GE t < 300 µs, duty cycle d < 2% TO-247 AD Outline IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 3300 220 30 ...
Page 3
... GE Fig. 3 Typ. Transfer Characteristics 600V 20A nanocoulombs G Fig. 5 Typ. Gate Charge characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved V = 17V GE 15V 13V 25° 100 0.1 100 120 140 IXBH 40N160 125°C ...
Page 4
... Fig. 7 Typ. Fall Time 1 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 0.0001 Fig. 9 Typ. Transient Thermal Impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 400 300 200 100 Fig. 8 Typ. Turn Off Delay Time ...