IRG4PSH71KPBF International Rectifier, IRG4PSH71KPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PSH71KPBF
• Description: IGBT UFAST 1200V 78A SUPER247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71KPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 42A
• Current - Collector (ic) (max): 78A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 78A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PSH71KPBF

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Fig. 9 - Typical Switching Losses vs. Gate
10000
20
15
10
8000
6000
4000
2000
5
0
0
V
V
T
I
Fig. 7 - Typical Capacitance vs.
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 960V
= 15V
= 25
= 42A
C
C
C
R
ies
oes
V
10
res
G
CE
°
, Gate Resistance
C
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
Resistance
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
100
20
15
10
Fig. 10 - Typical Switching Losses vs.
10
5
0
1
-60 -40 -20
0
Fig. 8 - Typical Gate Charge vs.
V
R
V
V
I
CC
C
GE
CC
G
= 400V
= 42A
Gate-to-Emitter Voltage
= 15V
= 960V
= 5.0
100
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
G
0
20
200
40
IRG4PSH71K
60
300
80 100 120 140 160
I =
I =
I =
400
C
C
C
°
84
42
21
A
A
A
500
5