IRG4PSH71KPBF International Rectifier, IRG4PSH71KPBF Datasheet - Page 2
IRG4PSH71KPBF
Manufacturer Part Number
IRG4PSH71KPBF
Description
IGBT UFAST 1200V 78A SUPER247
Manufacturer
International Rectifier
Specifications of IRG4PSH71KPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 42A
Current - Collector (ic) (max)
78A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
350W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PSH71KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRG4PSH71K
Notes:
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
V
g
I
I
CES
GES
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
d(on)
d(off)
f
d(on)
d(off)
f
V
fe
r
sc
r
(BR)CES
(BR)ECS
GE(th)
V
CE(ON)
E
on
off
ts
ts
ies
oes
res
g
ge
gc
2
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature
CC
/ T
= 80%(V
/ T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
Parameter
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
G
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
= 5.0 ,
1200 –––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
18
25
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.97
3.44
2.60
5770
–––
–––
–––
–––
–––
––– ±100
-12
2.35
3.14
5.49
11.5
1.1
410
145
220
160
460
250
400
100
38
47
45
38
42
41
13
—
Pulse width
Pulse width 5.0µs, single shot
––– mV/°C V
–––
–––
–––
–––
–––
–––
500
3.9
6.0
2.0
5.0
610
220
340
250
8.3
70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/°C
µA
mA
nA
mJ
mJ
V
nC
nH
V
V
S
ns
µs
pF
ns
80µs; duty factor
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V
V
ƒ = 1.0MHz
I
I
I
C
C
C
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
C
C
C
J
J
CC
GE
GE
CC
GE
GE
GE
CC
= 42A
= 42A, V
= 42A, V
= 42A
= 78A
= 42A , T
= 25°C
= 150°C
= 50V, I
= V
= V
= 0V, V
= ±20V
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 15V
= 0V
= 400V
= 15V, R
= 720V, T
= 20V, R
= 15V, R
= 30V
GE
GE
Conditions
, I
, I
C
C
C
CE
C
C
CE
CE
C
CC
CC
= 250µA
= 1.0A
= 10mA
J
= 250µA
= 1.5mA
= 42A
= 150°C
= 1200V
G
G
G
= 10V, T
= 1200V, T
Conditions
= 960V
J
= 960V
= 5.0
= 5.0
= 5.0
0.1%
= 125°C
See Fig.8
See Fig. 7
www.irf.com
J
V
= 25°C
See Fig.2, 5
J
GE
= 150°C
= 15V