IRG4PSH71KPBF International Rectifier, IRG4PSH71KPBF Datasheet - Page 2

IGBT UFAST 1200V 78A SUPER247

IRG4PSH71KPBF

Manufacturer Part Number
IRG4PSH71KPBF
Description
IGBT UFAST 1200V 78A SUPER247
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4PSH71KPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 42A
Current - Collector (ic) (max)
78A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
350W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PSH71KPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PSH71KPBF
Quantity:
25 780
IRG4PSH71K
Notes:
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
V
g
I
I
CES
GES
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
d(on)
d(off)
f
d(on)
d(off)
f
V
fe
r
sc
r
(BR)CES
(BR)ECS
GE(th)
V
CE(ON)
E
on
off
ts
ts
ies
oes
res
g
ge
gc
2
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature
CC
/ T
= 80%(V
/ T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
Parameter
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
G
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
= 5.0 ,
1200 –––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
18
25
10
2.97
3.44
2.60
5770
–––
–––
–––
–––
–––
––– ±100
-12
2.35
3.14
5.49
11.5
1.1
410
145
220
160
460
250
400
100
38
47
45
38
42
41
13
Pulse width
Pulse width 5.0µs, single shot
––– mV/°C V
–––
–––
–––
–––
–––
–––
500
3.9
6.0
2.0
5.0
610
220
340
250
8.3
70
V/°C
µA
mA
nA
mJ
mJ
V
nC
nH
V
V
S
ns
µs
pF
ns
80µs; duty factor
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V
V
ƒ = 1.0MHz
I
I
I
C
C
C
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
C
C
C
J
J
CC
GE
GE
CC
GE
GE
GE
CC
= 42A
= 42A, V
= 42A, V
= 42A
= 78A
= 42A , T
= 25°C
= 150°C
= 50V, I
= V
= V
= 0V, V
= ±20V
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 15V
= 0V
= 400V
= 15V, R
= 720V, T
= 20V, R
= 15V, R
= 30V
GE
GE
Conditions
, I
, I
C
C
C
CE
C
C
CE
CE
C
CC
CC
= 250µA
= 1.0A
= 10mA
J
= 250µA
= 1.5mA
= 42A
= 150°C
= 1200V
G
G
G
= 10V, T
= 1200V, T
Conditions
= 960V
J
= 960V
= 5.0
= 5.0
= 5.0
0.1%
= 125°C
See Fig.8
See Fig. 7
www.irf.com
J
V
= 25°C
See Fig.2, 5
J
GE
= 150°C
= 15V

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