IXGH32N60CD1 IXYS, IXGH32N60CD1 Datasheet - Page 4

• Manufacturer Part Number: IXGH32N60CD1
• Description: IGBT W/DIODE 600V 60A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH32N60CD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 32A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 55
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.85
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): 32
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
0.001
0.01
1.00
0.75
0.50
0.25
0.00
0.1
0.00001
Fig. 11. Transient Thermal Resistance
Fig. 9. Gate Charge
1
16
12
8
4
0
0
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Fig. 7. Dependence of E
0
Single pulse
T
R
J
G
= 125°C
V
= 10Ω
I
CE
C
= 32A
= 300V
25
20
Q
g
I
- nanocoulombs
C
50
- Amperes
0.0001
40
75
E
ON
(OFF)
E
and E
(ON)
60
100
OFF
D = Duty Cycle
on I
0.001
Pulse Width - Seconds
125
80
C
.
4
3
2
1
0
4,835,592
4,850,072
4,881,106
4,931,844
100
0.1
64
10
0.01
4
3
2
1
0
1
0
0
Fig. 8. Dependence of E
Fig. 10. Turn-off Safe Operating Area
E
5,017,508
5,034,796
E
T
(ON)
E
J
(ON)
(ON)
= 125°C
100
10
5,049,961
5,063,307
200
T
R
dV/dt < 5V/ns
20
J
G
= 125°C
= 4.7Ω
R
V
G
CE
IXGH 32N60CD1
IXGT 32N60CD1
I
C
I
I
- Ohms
C
0.1
C
= 16A
300
- Volts
= 64A
30
= 32A
5,187,117
5,237,481
ON
400
40
and E
5,486,715
5,381,025
500
OFF
50
E
E
E
(OFF)
(OFF)
on R
(OFF)
6,306,728B1
600
60
1
G
8
6
4
2
0
.